IPD80R1K4CEATMA1

Mfr. #:: IPD80R1K4CEATMA1
Produttore:: Infineon Technologies
Descrizione:: MOSFET N-Ch 800V 3.9A DPAK-2
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPD80R1K4CEATMA1 Scheda dati
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Maggiori informazioni:: IPD80R1K4CEATMA1 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: Tecnologie Infineon

categoria di prodotto: Transistor - FET, MOSFET - Singoli

Serie: XPD80R1

Confezione: Bobina

Alias parziali: IPD80R1K4CE SP001130972

Unità di peso: 0.139332 oz

Stile di montaggio: SMD/SMT

Nome depositato: CoolMOS

Pacchetto-Custodia: TO-252-3

Tecnologia: si

Numero di canali: 1 Channel

Configurazione: Separare

Tipo a transistor: 1 N-Channel

Pd-Power-Dissipazione: 63 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 12 ns

Ora di alzarsi: 15 ns

Vgs-Gate-Source-Voltage: 30 V

Id-Continuo-Scarico-Corrente: 3.9 A

Vds-Drain-Source-Breakdown-Voltage: 800 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: 3 V

Rds-On-Drain-Source-Resistenza: 1.4 Ohms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 72 ns

Tempo di ritardo all'accensione tipico: 25 ns

Qg-Gate-Carica: 23 nC

Tags: IPD80R1K4C, IPD80R1K4, IPD80R1, IPD80R, IPD80, IPD8, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD80R1K4CEATMA1 Maggiori informazioni

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ CE Power MOSFETs: Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPD80R1K4CEATMA1 DISTI # V72:2272_06383758	Infineon Technologies AG	Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) DPAK T/R	2450	1000:$0.4802 500:$0.5896 250:$0.6425 100:$0.6647 25:$0.8239 10:$0.8339 1:$0.9540
IPD80R1K4CEATMA1 DISTI # IPD80R1K4CEATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 800V 3.9A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7146In Stock	1000:$0.6069 500:$0.7687 100:$0.9912 10:$1.2540 1:$1.4200
IPD80R1K4CEATMA1 DISTI # IPD80R1K4CEATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 800V 3.9A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7146In Stock	1000:$0.6069 500:$0.7687 100:$0.9912 10:$1.2540 1:$1.4200
IPD80R1K4CEATMA1 DISTI # IPD80R1K4CEATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 800V 3.9A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	5000In Stock	2500:$0.5499
IPD80R1K4CEATMA1 DISTI # 26899231	Infineon Technologies AG	Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) DPAK T/R	2450	1000:$0.5060 500:$0.5901 250:$0.6796 100:$0.6814 25:$0.8258 15:$0.8408
IPD80R1K4CEATMA1 DISTI # IPD80R1K4CEATMA1	Infineon Technologies AG	Trans MOSFET N-CH 800(Min)V 3.9A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R1K4CEATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5139 5000:$0.4949 10000:$0.4779 15000:$0.4609 25000:$0.4529
IPD80R1K4CEATMA1 DISTI # SP001130972	Infineon Technologies AG	Trans MOSFET N-CH 800(Min)V 3.9A 3-Pin TO-252 T/R (Alt: SP001130972) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.7819 5000:€0.6099 10000:€0.5449 15000:€0.4959 25000:€0.4649
IPD80R1K4CEATMA1 DISTI # 13AC9051	Infineon Technologies AG	MOSFET, N-CH, 800V, 3.9A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	1:$1.1800 10:$1.0000 25:$0.9230 50:$0.8450 100:$0.7680 250:$0.7240 500:$0.6790 1000:$0.5360
IPD80R1K4CEATMA1 DISTI # 726-IPD80R1K4CEATMA1	Infineon Technologies AG	MOSFET N-Ch 800V 3.9A DPAK-2	43861	1:$1.1800 10:$1.0000 100:$0.7680 500:$0.6790 1000:$0.5360
IPD80R1K4CEATMA1 DISTI # 2726058	Infineon Technologies AG	MOSFET, N-CH, 800V, 3.9A, TO-252-3 RoHS: Compliant	1324	1:$2.2500 10:$1.9900 100:$1.5700
IPD80R1K4CEATMA1 DISTI # C1S322000579253	Infineon Technologies AG	MOSFETs RoHS: Compliant	2450	250:$0.6796 100:$0.6814 25:$0.8258 10:$0.8408
IPD80R1K4CEATMA1 DISTI # XSFP00000152672	Infineon Technologies AG	Half Bridge Based MOSFET Driver, 0.35A, CMOS,PDSO14 RoHS: Compliant	21872	2500:$1.1900 21872:$1.0800
IPD80R1K4CEATMA1 DISTI # 2726058	Infineon Technologies AG	MOSFET, N-CH, 800V, 3.9A, TO-252-3 RoHS: Compliant	1514	5:£0.8500 25:£0.7650 100:£0.5870 250:£0.5530 500:£0.5190

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: IPD80R1K4P7ATMA1 OMO.#: OMO-IPD80R1K4P7ATMA1	MOSFET
	Mfr.#: IPD80R1K4CEATMA1 OMO.#: OMO-IPD80R1K4CEATMA1	MOSFET N-Ch 800V 3.9A DPAK-2
	Mfr.#: IPD80R1K4CEBTMA1 OMO.#: OMO-IPD80R1K4CEBTMA1	MOSFET N-Ch 800V 3.9A DPAK-2
	Mfr.#: IPD80R1K0CE OMO.#: OMO-IPD80R1K0CE-1190	Trans MOSFET N 800V 5.7A 3-Pin TO-252 T/R (Alt: IPD80R1K0CE)
	Mfr.#: IPD80R1K0CEATMA1 OMO.#: OMO-IPD80R1K0CEATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 800V 5.7A TO252-3
	Mfr.#: IPD80R1K0CEBTMA1 , 2SD24 OMO.#: OMO-IPD80R1K0CEBTMA1-2SD24-1190	Nuovo e originale
	Mfr.#: IPD80R1K2P7ATMA1 OMO.#: OMO-IPD80R1K2P7ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 800V 4.5A TO252-3
	Mfr.#: IPD80R1K4CEBTMA1 , 2SD24 OMO.#: OMO-IPD80R1K4CEBTMA1-2SD24-1190	Nuovo e originale
	Mfr.#: IPD80R1K4P7ATMA1 OMO.#: OMO-IPD80R1K4P7ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 800V 4A DPAK
	Mfr.#: IPD80R1K0CEBTMA1 OMO.#: OMO-IPD80R1K0CEBTMA1-INFINEON-TECHNOLOGIES	MOSFET N-Ch 800V 5.7A DPAK-2

Disponibilità

Azione:: Available
Su ordine:: 3500
Inserisci la quantità:

Il prezzo attuale di IPD80R1K4CEATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,68 USD~~; ~~0,68 USD~~

10: ~~0,65 USD~~; ~~6,45 USD~~

100: ~~0,61 USD~~; ~~61,14 USD~~

500: ~~0,58 USD~~; ~~288,70 USD~~

1000: ~~0,54 USD~~; ~~543,50 USD~~

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IPD80R1K4CEATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes