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IPD80R1K0CEBTMA1

IPD80R1K0CEBTMA1
Mfr. #:
IPD80R1K0CEBTMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-Ch 800V 5.7A DPAK-2
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPD80R1K0CEBTMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
XPD80R1
Confezione
Bobina
Alias ​​parziali
IPD80R1K0CE SP001100606
Unità di peso
0.139332 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TO-252-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
83 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
8 ns
Ora di alzarsi
15 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuo-Scarico-Corrente
5.7 A
Vds-Drain-Source-Breakdown-Voltage
800 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
3 V
Rds-On-Drain-Source-Resistenza
950 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
72 ns
Tempo di ritardo all'accensione tipico
25 ns
Qg-Gate-Carica
31 nC
Tags
IPD80R1K0, IPD80R1, IPD80R, IPD80, IPD8, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 800(Min)V 5.7A 3-Pin TO-252 T/R
***i-Key
MOSFET N-CH 800V 5.7A TO252-3
***ronik
N-CH 800V 5,7A 950mOhm TO252
***ineon
800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting
Parte # Mfg. Descrizione Azione Prezzo
IPD80R1K0CEBTMA1
DISTI # IPD80R1K0CEBTMA1TR-ND		Infineon Technologies AGMOSFET N-CH 800V 5.7A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    IPD80R1K0CEBTMA1
    DISTI # IPD80R1K0CEBTMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 800V 5.7A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPD80R1K0CEBTMA1
      DISTI # IPD80R1K0CEBTMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 800V 5.7A TO252-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPD80R1K0CEBTMA1
        DISTI # SP001100606        		Infineon Technologies AGTrans MOSFET N-CH 800(Min)V 5.7A 3-Pin TO-252 T/R (Alt: SP001100606)
        RoHS: Compliant
        Min Qty: 2500
        Container: Tape and Reel        		Europe - 10
        • 25000:€0.5539
        • 15000:€0.5919
        • 10000:€0.6789
        • 5000:€0.8139
        • 2500:€0.9699
        Immagine Parte # Descrizione
        IPD80R1K4CEATMA1

        Mfr.#: IPD80R1K4CEATMA1

        OMO.#: OMO-IPD80R1K4CEATMA1

        		 MOSFET N-Ch 800V 3.9A DPAK-2
        IPD80R1K0CEATMA1

        Mfr.#: IPD80R1K0CEATMA1

        OMO.#: OMO-IPD80R1K0CEATMA1

        		 MOSFET N-Ch 800V 5.7A DPAK-2
        IPD80R1K2P7ATMA1-CUT TAPE

        Mfr.#: IPD80R1K2P7ATMA1-CUT TAPE

        OMO.#: OMO-IPD80R1K2P7ATMA1-CUT-TAPE-1190

        		 Nuovo e originale
        IPD80R1K0CE

        Mfr.#: IPD80R1K0CE

        OMO.#: OMO-IPD80R1K0CE-1190

        		 Trans MOSFET N 800V 5.7A 3-Pin TO-252 T/R (Alt: IPD80R1K0CE)
        IPD80R1K0CEATMA1

        Mfr.#: IPD80R1K0CEATMA1

        OMO.#: OMO-IPD80R1K0CEATMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 800V 5.7A TO252-3
        IPD80R1K2P7ATMA1

        Mfr.#: IPD80R1K2P7ATMA1

        OMO.#: OMO-IPD80R1K2P7ATMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 800V 4.5A TO252-3
        IPD80R1K4CE

        Mfr.#: IPD80R1K4CE

        OMO.#: OMO-IPD80R1K4CE-1190

        		 Trans MOSFET N-CH 800V 3.9A 3-Pin TO-252 T/R (Alt: IPD80R1K4CE)
        IPD80R1K4CEBTMA1 , 2SD24

        Mfr.#: IPD80R1K4CEBTMA1 , 2SD24

        OMO.#: OMO-IPD80R1K4CEBTMA1-2SD24-1190

        		 Nuovo e originale
        IPD80R1K0CEBTMA1

        Mfr.#: IPD80R1K0CEBTMA1

        OMO.#: OMO-IPD80R1K0CEBTMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-Ch 800V 5.7A DPAK-2
        IPD80R1K4CEBTMA1

        Mfr.#: IPD80R1K4CEBTMA1

        OMO.#: OMO-IPD80R1K4CEBTMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-Ch 800V 3.9A DPAK-2
        Disponibilità
        Azione:
        Available
        Su ordine:
        1000
        Inserisci la quantità:
        Il prezzo attuale di IPD80R1K0CEBTMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        0,94 USD
        0,94 USD
        10
        0,90 USD
        8,97 USD
        100
        0,85 USD
        84,97 USD
        500
        0,80 USD
        401,25 USD
        1000
        0,76 USD
        755,30 USD
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