SI7613DN-T1-GE3

SI7613DN-T1-GE3
Mfr. #:
SI7613DN-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET -20V Vds 16V Vgs PowerPAK 1212-8
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI7613DN-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
E
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerPAK-1212-8
Nome depositato:
TrenchFET
Confezione:
Bobina
Altezza:
1.04 mm
Lunghezza:
3.3 mm
Serie:
SI7
Larghezza:
3.3 mm
Marca:
Vishay / Siliconix
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Parte # Alias:
SI7613DN-GE3
Tags
SI761, SI76, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET P-CH 20V 17A 8-Pin PowerPAK 1212 T/R
***ment14 APAC
MOSFET, P CH, -20V, 0.0072OHM, -35A, POW
*** Source Electronics
MOSFET P-CH 20V 35A 1212-8 PPAK
***i-Key
MOSFET P-CH 20V 35A PPAK1212-8
***nell
MOSFET, P CH, -20V, -35A, POWERPAK 1212; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:52.1W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-
Parte # Mfg. Descrizione Azione Prezzo
SI7613DN-T1-GE3
DISTI # V72:2272_09215660
Vishay IntertechnologiesTrans MOSFET P-CH 20V 17A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
1155
  • 1000:$0.4887
  • 500:$0.5830
  • 250:$0.6546
  • 100:$0.6815
  • 25:$0.7963
  • 10:$0.9732
  • 1:$1.1751
SI7613DN-T1-GE3
DISTI # V36:1790_09215660
Vishay IntertechnologiesTrans MOSFET P-CH 20V 17A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
0
  • 3000000:$0.4227
  • 1500000:$0.4229
  • 300000:$0.4345
  • 30000:$0.4527
  • 3000:$0.4557
SI7613DN-T1-GE3
DISTI # SI7613DN-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 20V 35A 1212-8 PPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
9876In Stock
  • 1000:$0.5029
  • 500:$0.6370
  • 100:$0.7711
  • 10:$0.9890
  • 1:$1.1100
SI7613DN-T1-GE3
DISTI # SI7613DN-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 20V 35A 1212-8 PPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
9876In Stock
  • 1000:$0.5029
  • 500:$0.6370
  • 100:$0.7711
  • 10:$0.9890
  • 1:$1.1100
SI7613DN-T1-GE3
DISTI # SI7613DN-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 20V 35A 1212-8 PPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 15000:$0.4166
  • 6000:$0.4329
  • 3000:$0.4557
SI7613DN-T1-GE3
DISTI # 31314517
Vishay IntertechnologiesTrans MOSFET P-CH 20V 17A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
1155
  • 17:$1.1751
SI7613DN-T1-GE3
DISTI # SI7613DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 20V 17A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7613DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.3969
  • 18000:$0.4079
  • 12000:$0.4199
  • 6000:$0.4369
  • 3000:$0.4509
SI7613DN-T1-GE3
DISTI # 85W3220
Vishay IntertechnologiesMOSFET, P CHANNEL, -20V, 0.0072OHM, -35A, POWERPAK 1212,Transistor Polarity:P Channel,Continuous Drain Current Id:-35A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0072ohm,Rds(on) Test Voltage Vgs:-4.5V,Product Range:-RoHS Compliant: Yes0
  • 500:$0.5960
  • 250:$0.6440
  • 100:$0.6930
  • 50:$0.7970
  • 25:$0.9020
  • 1:$1.0900
SI7613DN-T1-GE3
DISTI # 15R5219
Vishay IntertechnologiesMOSFET Transistor, P Channel, -35 A, -20 V, 0.0072 ohm, -4.5 V, -1 V RoHS Compliant: Yes0
  • 10000:$0.3940
  • 6000:$0.4030
  • 4000:$0.4190
  • 2000:$0.4650
  • 1000:$0.5120
  • 1:$0.5340
SI7613DN-T1-GE3.
DISTI # 28AC2172
Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:-35A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0072ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:52.1W,No. of Pins:8PinsRoHS Compliant: Yes0
  • 10000:$0.3940
  • 6000:$0.4030
  • 4000:$0.4190
  • 2000:$0.4650
  • 1000:$0.5120
  • 1:$0.5340
SI7613DN-T1-GE3
DISTI # 781-SI7613DN-GE3
Vishay IntertechnologiesMOSFET -20V Vds 16V Vgs PowerPAK 1212-8
RoHS: Compliant
4637
  • 1:$1.0800
  • 10:$0.8920
  • 100:$0.6850
  • 500:$0.5890
  • 1000:$0.4640
  • 3000:$0.4330
  • 6000:$0.4120
  • 9000:$0.3960
SI7613DN-T1-GE3
DISTI # 2335368
Vishay IntertechnologiesMOSFET, P CH, -20V, -35A, POWERPAK 1212
RoHS: Compliant
0
  • 3000:$0.8720
  • 500:$0.8890
  • 100:$1.0300
  • 10:$1.3500
  • 1:$1.6300
SI7613DN-T1-GE3
DISTI # 2459677
Vishay IntertechnologiesMOSFET, P CHANNEL, -20V, 0.0072OHM, -35A
RoHS: Compliant
0
  • 3000:$0.8720
  • 500:$0.8890
  • 100:$1.0300
  • 10:$1.3500
  • 1:$1.6300
SI7613DN-T1-GE3Vishay IntertechnologiesMOSFET -20V Vds 16V Vgs PowerPAK 1212-8
RoHS: Compliant
Americas -
    Immagine Parte # Descrizione
    SI2347DS-T1-GE3

    Mfr.#: SI2347DS-T1-GE3

    OMO.#: OMO-SI2347DS-T1-GE3

    MOSFET -30V Vds 20V Vgs SOT-23
    FDN340P

    Mfr.#: FDN340P

    OMO.#: OMO-FDN340P

    MOSFET SSOT-3 P-CH -20V
    CBC3225T680KR

    Mfr.#: CBC3225T680KR

    OMO.#: OMO-CBC3225T680KR

    Fixed Inductors 1210 68uH 1300mOhms +/-10% 320mA
    RC0603FR-0795K3L

    Mfr.#: RC0603FR-0795K3L

    OMO.#: OMO-RC0603FR-0795K3L

    Thick Film Resistors - SMD 95.3K OHM 1%
    RC0402FR-0749K9L

    Mfr.#: RC0402FR-0749K9L

    OMO.#: OMO-RC0402FR-0749K9L

    Thick Film Resistors - SMD 49.9K OHM 1%
    SI2347DS-T1-GE3

    Mfr.#: SI2347DS-T1-GE3

    OMO.#: OMO-SI2347DS-T1-GE3-VISHAY

    IGBT Transistors MOSFET -30V .042Ohm@10V 5A P-Ch G-III
    51110-0450

    Mfr.#: 51110-0450

    OMO.#: OMO-51110-0450-410

    Headers & Wire Housings 4CIR CRIMP HOUSING
    CBC3225T680KR

    Mfr.#: CBC3225T680KR

    OMO.#: OMO-CBC3225T680KR-TAIYO-YUDEN

    Fixed Inductors INDCTR HI CUR WND 1210 68uH 10%
    EMK325ABJ107MM-P

    Mfr.#: EMK325ABJ107MM-P

    OMO.#: OMO-EMK325ABJ107MM-P-TAIYO-YUDEN

    CAP CER 100UF 16V X5R 1210
    FDN340P

    Mfr.#: FDN340P

    OMO.#: OMO-FDN340P-ON-SEMICONDUCTOR

    MOSFET P-CH 20V 2A SSOT3
    Disponibilità
    Azione:
    Available
    Su ordine:
    1986
    Inserisci la quantità:
    Il prezzo attuale di SI7613DN-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Iniziare con
    Prodotti più recenti
    Top