SI2347DS-T1-GE3

Mfr. #:: SI2347DS-T1-GE3
Produttore:: Vishay
Descrizione:: IGBT Transistors MOSFET -30V .042Ohm@10V 5A P-Ch G-III
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI2347DS-T1-GE3 Scheda dati
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Maggiori informazioni:: SI2347DS-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: VISHAY

categoria di prodotto: Transistor - FET, MOSFET - Singoli

Confezione: Bobina

Unità di peso: 0.050717 oz

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: SOT-23-3

Tecnologia: si

Numero di canali: 1 Channel

Configurazione: Separare

Tipo a transistor: 1 P-Channel

Pd-Power-Dissipazione: 1.7 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 9 ns

Ora di alzarsi: 6 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: - 3.9 A

Vds-Drain-Source-Breakdown-Voltage: - 30 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: - 1 V to - 2.5 V

Rds-On-Drain-Source-Resistenza: 68 mOhms

Polarità del transistor: Canale P

Tempo di ritardo allo spegnimento tipico: 19 ns

Tempo di ritardo all'accensione tipico: 6 ns

Qg-Gate-Carica: 6.9 nC

Transconduttanza diretta-Min: 10 S

Tags: SI2347, SI234, SI23, SI2

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2347DS-T1-GE3 Maggiori informazioni

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI2347DS-T1-GE3 DISTI # V72:2272_09216893	Vishay Intertechnologies	Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R RoHS: Compliant	1598	1000:$0.0938 500:$0.1226 250:$0.1411 100:$0.1568 25:$0.2662 10:$0.2956 1:$0.4598
SI2347DS-T1-GE3 DISTI # V36:1790_09216893	Vishay Intertechnologies	Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R RoHS: Compliant	0	1500000:$0.0682 300000:$0.0717 30000:$0.0783 3000:$0.0794
SI2347DS-T1-GE3 DISTI # SI2347DS-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 5A SOT-23 Min Qty: 1 Container: Cut Tape (CT)	24666In Stock	1000:$0.1030 500:$0.1339 100:$0.1957 10:$0.3140 1:$0.4200
SI2347DS-T1-GE3 DISTI # SI2347DS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 5A SOT-23 Min Qty: 1 Container: Digi-Reel®	24666In Stock	1000:$0.1030 500:$0.1339 100:$0.1957 10:$0.3140 1:$0.4200
SI2347DS-T1-GE3 DISTI # SI2347DS-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 5A SOT-23 Min Qty: 3000 Container: Tape & Reel (TR)	24000In Stock	150000:$0.0665 75000:$0.0683 30000:$0.0761 15000:$0.0814 6000:$0.0892 3000:$0.0945
SI2347DS-T1-GE3 DISTI # 32705357	Vishay Intertechnologies	Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R RoHS: Compliant	6000	3000:$0.0805
SI2347DS-T1-GE3 DISTI # 32435739	Vishay Intertechnologies	Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R RoHS: Compliant	2198	1000:$0.0939 500:$0.1227 250:$0.1411 101:$0.1568
SI2347DS-T1-GE3 DISTI # SI2347DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 3.8A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2347DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.0639 18000:$0.0649 12000:$0.0669 6000:$0.0699 3000:$0.0719
SI2347DS-T1-GE3 DISTI # SI2347DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 3.8A 3-Pin TO-236 T/R (Alt: SI2347DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.0689 18000:€0.0739 12000:€0.0799 6000:€0.0929 3000:€0.1369
SI2347DS-T1-GE3 DISTI # 99W9603	Vishay Intertechnologies	P-CHANNEL 30-V (D-S) MOSFET RoHS: Not Compliant	0	50000:$0.0650 30000:$0.0710 20000:$0.0770 10000:$0.0870 5000:$0.0990 1:$0.1050
SI2347DS-T1-GE3 DISTI # 70AC6496	Vishay Intertechnologies	MOSFET, P-CH, -30V, -5A, SOT-23,Transistor Polarity:P Channel,Continuous Drain Current Id:-5A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.033ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,MSL:- RoHS Compliant: Yes RoHS: Compliant	4252	1000:$0.1030 500:$0.1340 250:$0.1500 100:$0.1650 50:$0.2240 25:$0.2830 1:$0.4800
SI2347DS-T1-GE3 DISTI # 70459513	Vishay Siliconix	-30V .042Ohm@10V 5A P-Ch G-III RoHS: Not Compliant	0	3000:$0.1650 6000:$0.1540 12000:$0.1100 24000:$0.0990
SI2347DS-T1-GE3	Vishay Intertechnologies	P-Channel 30 V 42 mOhm 22 nC Surface Mount Power Mosfet - SOT-23-3 RoHS: Compliant Min Qty: 3000	3000Reel	3000:$0.0610
SI2347DS-T1-GE3 DISTI # 78-SI2347DS-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs SOT-23 RoHS: Compliant	71661	1:$0.4800 10:$0.2830 100:$0.1650 500:$0.1340 1000:$0.1030 3000:$0.0890
SI2347DS-T1-GE3 DISTI # 2679678	Vishay Intertechnologies	MOSFET, P-CH, -30V, -5A, SOT-23 RoHS: Compliant	0	3000:$0.1200
SI2347DS-T1-GE3 DISTI # 2646368	Vishay Intertechnologies	MOSFET, P-CH, -30V, -5A, SOT-23 RoHS: Compliant	0	1000:$0.1630 500:$0.2120 100:$0.3100 10:$0.4970 1:$0.6600
SI2347DS-T1-GE3 DISTI # 2646368	Vishay Intertechnologies	MOSFET, P-CH, -30V, -5A, SOT-23	962	1500:£0.0730 500:£0.0800 100:£0.1300 50:£0.2260 5:£0.2470
SI2347DS-T1-GE3	Vishay	P-Channel 30 V 42 mOhm 22 nC Surface Mount Power Mosfet - SOT-23-3	100	1:¥4.2157 10:¥2.9679 100:¥1.9470 500:¥1.1504 1000:¥0.8849
SI2347DS-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs SOT-23 RoHS: Compliant	Americas - 69000	3000:$0.0720 6000:$0.0680 12000:$0.0660 18000:$0.0640

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SI2347DS-T1-GE3 OMO.#: OMO-SI2347DS-T1-GE3	MOSFET -30V Vds 20V Vgs SOT-23
	Mfr.#: SI2347DS-T1-GE3 OMO.#: OMO-SI2347DS-T1-GE3-VISHAY	IGBT Transistors MOSFET -30V .042Ohm@10V 5A P-Ch G-III
	Mfr.#: SI2347DS-T1-E3 OMO.#: OMO-SI2347DS-T1-E3-1190	Nuovo e originale
	Mfr.#: SI2347DS-T1-GE3-CUT TAPE OMO.#: OMO-SI2347DS-T1-GE3-CUT-TAPE-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 3000
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Il prezzo attuale di SI2347DS-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,10 USD~~; ~~0,10 USD~~

10: ~~0,09 USD~~; ~~0,91 USD~~

100: ~~0,09 USD~~; ~~8,63 USD~~

500: ~~0,08 USD~~; ~~40,75 USD~~

1000: ~~0,08 USD~~; ~~76,70 USD~~

Iniziare con

SI2347 3
SI234 27
SI23 561
SI2 1125

SI2347DS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes