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MRFE6VP8600HR5

MRFE6VP8600HR5
Mfr. #:
MRFE6VP8600HR5
Produttore:
NXP / Freescale
Descrizione:
RF MOSFET Transistors VHV6 600W NI1230H 50V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
MRFE6VP8600HR5 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
MRFE6VP8600HR5 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
NXP
Categoria di prodotto:
Transistor MOSFET RF
RoHS:
Y
Polarità del transistor:
Canale N
Tecnologia:
si
Vds - Tensione di rottura Drain-Source:
140 V
Guadagno:
18.8 dB
Potenza di uscita:
600 W
Temperatura massima di esercizio:
+ 150 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
NI-1230
Confezione:
Bobina
Configurazione:
Dual
Frequenza operativa:
470 MHz to 860 MHz
Serie:
MRFE6VP8600H
Tipo:
MOSFET di potenza RF
Marca:
NXP / Freescale
Transconduttanza diretta - Min:
15.6 S
Pd - Dissipazione di potenza:
1.52 kW
Tipologia di prodotto:
Transistor MOSFET RF
Quantità confezione di fabbrica:
50
sottocategoria:
MOSFET
Vgs - Tensione Gate-Source:
10 V
Vgs th - Tensione di soglia gate-source:
2.07 V
Parte # Alias:
935321656178
Unità di peso:
0.464343 oz
Tags
MRFE6VP8, MRFE6VP, MRFE6V, MRFE6, MRFE, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,470 to 860 MHz, 600 W, Typ Gain in dB is 19.3 @ 860 MHz, 50 V, LDMOS, SOT1787
***et Europe
Transistor RF FET N-CH 130V 470MHz to 860MHz 4-Pin NI-1230 T/R
***ical
Trans RF MOSFET N-CH 130V 5-Pin Case 375D-05 T/R
***el Electronic
RF MOSFET Transistors VHV6 600W NI1230H 50V
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ment14 APAC
RF FET, 130V, 860MHZ-470MHZ, CASE 375D
***i-Key Marketplace
LDMOS BROADBAND RF POWER TRANSIS
***nell
RF FET, 130V, 860MHZ-470MHZ, CASE 375D; Drain Source Voltage Vds: 130V; Continuous Drain Current Id: -; Power Dissipation Pd: 1.052kW; Operating Frequency Min: 860MHz; Operating Frequency Max: 470MHz; RF Transistor Case: NI-1230; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MRFE6VP8600H Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
MRFE6VP8600H LDMOS Broadband RF Power MOSFET
NXP's MRFE6VP8600H LDMOS N-Channel Broadband RF Power MOSFET is designed for broadband operation from 470 to 860 MHz. This device has an integrated input matching network for better power distribution. The NXP MRF6VP8600H is capable of handling 65:1 VSWR through all phase angles at 50 VDC, 860 MHz, has an exception efficiency for Class AB analog or digital television operation, has an integrated input matching, enables fast, easy and complete shutdown of the amplifier, and has an extended negative gate-source voltage range of -6.0 V to +10 V. These devices are ideally suited for use in analog or digital television transmitters.Learn More
Parte # Mfg. Descrizione Azione Prezzo
MRFE6VP8600HR5
DISTI # 21099683		NXP SemiconductorsTrans RF MOSFET N-CH 130V 5-Pin Case 375D-05 T/R
RoHS: Compliant		21
  • 1:$318.1500
MRFE6VP8600HR5
DISTI # MRFE6VP8600HR5CT-ND		NXP SemiconductorsFET RF 2CH 130V 860MHZ NI-1230
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		47In Stock
  • 10:$267.3990
  • 1:$279.2000
MRFE6VP8600HR5
DISTI # MRFE6VP8600HR5DKR-ND		NXP SemiconductorsFET RF 2CH 130V 860MHZ NI-1230
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		47In Stock
  • 10:$267.3990
  • 1:$279.2000
MRFE6VP8600HR5
DISTI # MRFE6VP8600HR5TR-ND		NXP SemiconductorsFET RF 2CH 130V 860MHZ NI-1230
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 50:$253.8838
MRFE6VP8600HR5
DISTI # MRFE6VP8600HR5		Avnet, Inc.Trans MOSFET N-CH 130V 4-Pin NI-1230 T/R - Tape and Reel (Alt: MRFE6VP8600HR5)
RoHS: Compliant
Min Qty: 50
Container: Reel		Americas - 0
  • 50:$278.1900
  • 100:$267.2900
  • 200:$256.8900
  • 300:$247.4900
  • 500:$242.7900
MRFE6VP8600HR5
DISTI # 61AC0762		NXP SemiconductorsRF FET, 130V, 860MHZ-470MHZ, CASE 375D,Drain Source Voltage Vds:130V,Continuous Drain Current Id:-,Power Dissipation Pd:1.052kW,Operating Frequency Min:860MHz,Operating Frequency Max:470MHz,RF Transistor Case:NI-1230,No. of RoHS Compliant: Yes50
  • 1:$279.2100
  • 10:$267.3900
  • 25:$263.4500
MRFE6VP8600HR5
DISTI # 841-MRFE6VP8600HR5		NXP SemiconductorsRF MOSFET Transistors VHV6 600W NI1230H 50V
RoHS: Compliant		155
  • 1:$279.2100
  • 5:$272.9800
  • 10:$267.3900
  • 25:$263.4500
  • 50:$253.8800
MRFE6VP8600HR5
DISTI # MRFE6VP8600HR5		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		48
  • 1:$263.1200
  • 10:$256.1900
  • 25:$252.8700
MRFE6VP8600HR5
DISTI # 2890609		NXP SemiconductorsRF FET, 130V, 860MHZ-470MHZ, CASE 375D
RoHS: Compliant		50
  • 1:£218.0000
  • 5:£199.0000
MRFE6VP8600HR5
DISTI # 2890609		NXP SemiconductorsRF FET, 130V, 860MHZ-470MHZ, CASE 375D
RoHS: Compliant		50
  • 1:$445.0300
  • 10:$426.2100
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MRFE6VP5150NR1

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MRFE6VP5600HR5

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MRFE6VP6300-88

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OMO.#: OMO-MRFE6VP6300-88

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OMO.#: OMO-MRFE6VP100H-1190

 Nuovo e originale
MRFE6VP61K25GNR6

Mfr.#: MRFE6VP61K25GNR6

OMO.#: OMO-MRFE6VP61K25GNR6-NXP-SEMICONDUCTORS

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MRFE6VP6300HR5

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Disponibilità
Azione:
156
Su ordine:
2139
Inserisci la quantità:
Il prezzo attuale di MRFE6VP8600HR5 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
279,21 USD
279,21 USD
5
272,98 USD
1 364,90 USD
10
267,39 USD
2 673,90 USD
25
263,45 USD
6 586,25 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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