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MRFE6VP6300HSR5

MRFE6VP6300HSR5
Mfr. #:
MRFE6VP6300HSR5
Produttore:
NXP / Freescale
Descrizione:
RF MOSFET Transistors VHV6 300W50VISM NI780S-4
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
MRFE6VP6300HSR5 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
MRFE6VP6300HSR5 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
NXP
Categoria di prodotto:
Transistor MOSFET RF
RoHS:
Y
Polarità del transistor:
Canale N
Tecnologia:
si
Vds - Tensione di rottura Drain-Source:
130 V
Guadagno:
26.6 dB
Potenza di uscita:
300 W
Temperatura di esercizio minima:
- 30 C
Temperatura massima di esercizio:
+ 150 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
NI-780S-4
Confezione:
Bobina
Configurazione:
Separare
Frequenza operativa:
1.8 MHz to 600 MHz
Serie:
MRFE6VP6300
Tipo:
MOSFET di potenza RF
Marca:
NXP / Freescale
Pd - Dissipazione di potenza:
1.05 kW
Tipologia di prodotto:
Transistor MOSFET RF
Quantità confezione di fabbrica:
50
sottocategoria:
MOSFET
Vgs - Tensione Gate-Source:
10 V
Vgs th - Tensione di soglia gate-source:
2.2 V
Parte # Alias:
935314385178
Unità di peso:
0.161213 oz
Tags
MRFE6VP6300H, MRFE6VP63, MRFE6VP6, MRFE6VP, MRFE6V, MRFE6, MRFE, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1826
***escale Semiconductor
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
***et
LATERAL N-CHANNEL BROADBAND RF POWER MOSFET, 1.8-600 MHZ, 30
***ical
Trans RF MOSFET N-CH 130V 5-Pin NI-780S T/R
***et Europe
Trans MOSFET N-CH 130V 4-Pin NI-780S T/R
***hardson RFPD
RF POWER TRANSISTOR LDMOS
***i-Key
FET RF 2CH 130V 230MHZ NI780S-4
***ark
RF POWER FET, N CH, 125V, NI-780S-4; Transistor Type:RF MOSFET; Drain Source Voltage Vds:125V; Continuous Drain Current Id:100mA; Power Dissipation Pd:300W; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; Gain:26.5dB ;RoHS Compliant: Yes
MRFE6VPx Lateral N-Ch Broadband RF Power MOSFETs
NXP's MRFE6VPx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.Learn More
Parte # Mfg. Descrizione Azione Prezzo
MRFE6VP6300HSR5
DISTI # MRFE6VP6300HSR5-ND		NXP SemiconductorsFET RF 2CH 130V 230MHZ NI780S-4
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 50:$95.5168
MRFE6VP6300HSR5
DISTI # MRFE6VP6300HSR5		Avnet, Inc.Trans MOSFET N-CH 130V 4-Pin NI-780S T/R - Tape and Reel (Alt: MRFE6VP6300HSR5)
RoHS: Compliant
Min Qty: 50
Container: Reel		Americas - 0
  • 50:$97.2900
  • 100:$93.4900
  • 200:$89.7900
  • 300:$86.5900
  • 500:$84.8900
MRFE6VP6300HSR5
DISTI # 13T4415		NXP SemiconductorsRF POWER FET, N CHANNEL, 125V, NI-780S-4,Drain Source Voltage Vds:125V,Continuous Drain Current Id:100mA,Power Dissipation Pd:300W,Operating Frequency Min:1.8MHz,Operating Frequency Max:600MHz,RF Transistor Case:NI-780S,MSL:- RoHS Compliant: Yes0
  • 1:$111.5100
  • 10:$105.5200
  • 25:$100.1400
  • 50:$96.8000
  • 100:$88.8200
  • 250:$86.1900
  • 500:$83.4900
MRFE6VP6300HSR5
DISTI # 841-MRFE6VP6300HSR5		NXP SemiconductorsRF MOSFET Transistors VHV6 300W50VISM NI780S-4
RoHS: Compliant		0
  • 50:$95.5200
MRFE6VP6300HSR5
DISTI # MRFE6VP6300HSR5		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		25
  • 1:$111.6900
  • 10:$103.2200
  • 25:$100.1900
Immagine Parte # Descrizione
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MRFE6VP100HSR5

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MRFE6VP6300HSR3

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 RF MOSFET Transistors VHV6 300W50VISM NI780S-4
MRFE6VP61K25HSR6

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Mfr.#: MRFE6VP5600HR

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 Nuovo e originale
MRFE6VP61K25H

Mfr.#: MRFE6VP61K25H

OMO.#: OMO-MRFE6VP61K25H-1190

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MRFE6VP5150GNR1

Mfr.#: MRFE6VP5150GNR1

OMO.#: OMO-MRFE6VP5150GNR1-NXP-SEMICONDUCTORS

 FET RF 2CH 133V 230MHZ TO-270 GW
MRFE6VP8600HSR5

Mfr.#: MRFE6VP8600HSR5

OMO.#: OMO-MRFE6VP8600HSR5-NXP-SEMICONDUCTORS

 RF MOSFET Transistors VHV6 600W NI1230S 50V
MRFE6VP61K25HR5

Mfr.#: MRFE6VP61K25HR5

OMO.#: OMO-MRFE6VP61K25HR5-NXP-SEMICONDUCTORS

 FET RF 2CH 133V 230MHZ NI-1230
MRFE6VP6300HR5

Mfr.#: MRFE6VP6300HR5

OMO.#: OMO-MRFE6VP6300HR5-NXP-SEMICONDUCTORS

 RF MOSFET Transistors VHV6 300W50VISM NI780H-4
Disponibilità
Azione:
Available
Su ordine:
1000
Inserisci la quantità:
Il prezzo attuale di MRFE6VP6300HSR5 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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