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CSD19532Q5B

CSD19532Q5B
Mfr. #:
CSD19532Q5B
Descrizione:
Trans MOSFET N-CH Si 100V 100A 8-Pin VSON-CLIP EP T/R
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
CSD19532Q5B Scheda dati
Consegna:
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CSD19532Q5B maggiori informazioni CSD19532Q5B Product Details
Attributo del prodotto
Valore attributo
Produttore
TI
categoria di prodotto
FET - Single
Serie
NexFET
Confezione
Imballaggio alternativo Digi-ReelR
Stile di montaggio
SMD/SMT
Nome depositato
NexFET
Pacchetto-Custodia
8-PowerTDFN
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
8-VSON (5x6)
Configurazione
Separare
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
3.1W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
100V
Ingresso-Capacità-Ciss-Vds
4810pF @ 50V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
100A (Ta)
Rds-On-Max-Id-Vgs
4.9 mOhm @ 17A, 10V
Vgs-th-Max-Id
3.2V @ 250μA
Gate-Carica-Qg-Vgs
62nC @ 10V
Pd-Power-Dissipazione
3.1 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
6 ns
Ora di alzarsi
6 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
124 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
2.6 V
Rds-On-Drain-Source-Resistenza
4.9 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
22 ns
Tempo di ritardo all'accensione tipico
7 ns
Qg-Gate-Carica
48 nC
Transconduttanza diretta-Min
84 S
Modalità canale
Aumento
Tags
CSD19532, CSD1953, CSD19, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
100V, N ch NexFET MOSFET™, single SON5x6, 4.9mOhm 8-VSON-CLIP -55 to 150
***ical
Trans MOSFET N-CH Si 100V 100A 8-Pin VSON-CLIP EP T/R
***ment14 APAC
MOSFET, N CHANNEL, 100V, 100A, VSON-8
*** Source Electronics
100 V N-Channel NexFET Power MOSFET
***ark
Mosfet, N Channel, 100V, 100A, Vson-8; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.004Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.6V; Power Rohs Compliant: Yes
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Parte # Descrizione Azione Prezzo
CSD19532Q5B
DISTI # C1S746203699646		Trans MOSFET N-CH Si 100V 100A 8-Pin VSON-CLIP EP T/R
RoHS: Compliant		4
  • 2500:$2.1831
CSD19532Q5B
DISTI # 296-37478-1-ND		MOSFET N-CH 100V 100A 8SON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3883In Stock
  • 1000:$1.2864
  • 500:$1.5525
  • 100:$1.9961
  • 10:$2.4840
  • 1:$2.7500
CSD19532Q5B
DISTI # 296-37478-6-ND		MOSFET N-CH 100V 100A 8SON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3883In Stock
  • 1000:$1.2864
  • 500:$1.5525
  • 100:$1.9961
  • 10:$2.4840
  • 1:$2.7500
CSD19532Q5BT
DISTI # 296-44471-1-ND		MOSFET N-CH 100V 100A VSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1435In Stock
  • 100:$2.1975
  • 10:$2.7350
  • 1:$3.0300
CSD19532Q5BT
DISTI # 296-44471-6-ND		MOSFET N-CH 100V 100A VSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1435In Stock
  • 100:$2.1975
  • 10:$2.7350
  • 1:$3.0300
CSD19532Q5BT
DISTI # 296-44471-2-ND		MOSFET N-CH 100V 100A VSON
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		1250In Stock
  • 1250:$1.3749
  • 750:$1.4982
  • 500:$1.6594
  • 250:$1.8964
CSD19532Q5B
DISTI # 296-37478-2-ND		MOSFET N-CH 100V 100A 8SON
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$1.1628
CSD19532Q5B
DISTI # CSD19532Q5B		Trans MOSFET N-CH 100V 100A 8-Pin VSON T/R (Alt: CSD19532Q5B)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    CSD19532Q5B
    DISTI # CSD19532Q5B    		Trans MOSFET N-CH 100V 100A 8-Pin VSON T/R - Tape and Reel (Alt: CSD19532Q5B)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$1.1359
    • 5000:$1.0809
    • 10000:$1.0449
    • 15000:$1.0099
    • 25000:$0.9819
    CSD19532Q5BT
    DISTI # CSD19532Q5BT    		Trans MOSFET N-CH 100V 100A 8-Pin VSON T/R (Alt: CSD19532Q5BT)
    RoHS: Compliant
    Min Qty: 250
    Container: Tape and Reel    		Asia - 0
      CSD19532Q5BT
      DISTI # CSD19532Q5BT      		Trans MOSFET N-CH 100V 100A 8-Pin VSON T/R - Tape and Reel (Alt: CSD19532Q5BT)
      RoHS: Compliant
      Min Qty: 500
      Container: Reel      		Americas - 0
      • 500:$1.2504
      • 1000:$1.1899
      • 1500:$1.1499
      • 2500:$1.1119
      • 5000:$1.0809
      CSD19532Q5B
      DISTI # 41X5175      		MOSFET, N CHANNEL, 100V, 100A, VSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.6V , RoHS Compliant: Yes87
      • 1:$2.3000
      • 10:$1.9600
      • 25:$1.8300
      • 50:$1.7000
      • 100:$1.5700
      • 250:$1.4800
      • 500:$1.3800
      • 1000:$1.1400
      CSD19532Q5B
      DISTI # 73AC9827      		 0
      • 1:$2.3000
      • 10:$1.9600
      • 25:$1.8300
      • 50:$1.7000
      • 100:$1.5700
      • 250:$1.4800
      • 500:$1.3800
      • 1000:$1.1400
      CSD19532Q5B100V, 4.0 mOhm, SON5x6 N-Channel NexFET&#153,Power MOSFET2884
      • 1000:$0.8900
      • 750:$0.9300
      • 500:$1.1000
      • 250:$1.3000
      • 100:$1.3900
      • 25:$1.5800
      • 10:$1.7000
      • 1:$1.8900
      CSD19532Q5BT100V, 4.0 mOhm, SON5x6 N-Channel NexFET&#153,Power MOSFET250
      • 1000:$0.9800
      • 750:$1.0300
      • 500:$1.2200
      • 250:$1.4300
      • 100:$1.5300
      • 25:$1.7400
      • 10:$1.8700
      • 1:$2.0800
      CSD19532Q5BT
      DISTI # 595-CSD19532Q5BT      		MOSFET 100V, 4.0 mOhm, SON5x6 N-Channel NexFET Power MOSFET 8-VSON-CLIP -55 to 150
      RoHS: Compliant      		2326
      • 1:$2.5400
      • 10:$2.1600
      • 100:$1.7300
      • 250:$1.7300
      • 500:$1.5100
      • 1000:$1.2500
      • 2500:$1.1700
      CSD19532Q5B
      DISTI # 595-CSD19532Q5B      		MOSFET 100V 4.0 mOhm N-Ch NexFET Power MOSFET
      RoHS: Compliant      		1810
      • 1:$2.3000
      • 10:$1.9600
      • 100:$1.5700
      • 500:$1.3800
      • 1000:$1.1400
      • 2500:$1.0600
      CSD19532Q5B
      DISTI # 2419501      		MOSFET, N CHANNEL, 100V, 100A, VSON-8
      RoHS: Compliant      		0
      • 1:$3.6500
      • 10:$3.1000
      • 100:$2.4900
      • 500:$2.1900
      • 1000:$1.8100
      • 2500:$1.6800
      CSD19532Q5B
      DISTI # 2419501RL      		MOSFET, N CHANNEL, 100V, 100A, VSON-8
      RoHS: Compliant      		0
      • 1:$3.6500
      • 10:$3.1000
      • 100:$2.4900
      • 500:$2.1900
      • 1000:$1.8100
      • 2500:$1.6800
      Immagine Parte # Descrizione
      CSD19532Q5BT

      Mfr.#: CSD19532Q5BT

      OMO.#: OMO-CSD19532Q5BT

      		 MOSFET 100V, N ch NexFET MOSFETG , single SON5x6, 4.9mOhm 8-VSON-CLIP -55 to 150
      CSD19536KTT

      Mfr.#: CSD19536KTT

      OMO.#: OMO-CSD19536KTT

      		 MOSFET 100V, N ch NexFET MOSFETG , single D2PAK, 2.4mOhm 3-DDPAK/TO-263 -55 to 175
      CSD19536KTTT

      Mfr.#: CSD19536KTTT

      OMO.#: OMO-CSD19536KTTT

      		 MOSFET 100V N-Channel NexFET Power MOSFET
      CSD19502Q5B

      Mfr.#: CSD19502Q5B

      OMO.#: OMO-CSD19502Q5B

      		 MOSFET N-CH 3.4mOhm 80V Power MOSFET
      CSD19506KCS

      Mfr.#: CSD19506KCS

      OMO.#: OMO-CSD19506KCS

      		 MOSFET 80V N-CH Power MOSFET
      CSD19503KCS

      Mfr.#: CSD19503KCS

      OMO.#: OMO-CSD19503KCS

      		 MOSFET 80V 7.6mOhm N-CH Pwr MOSFET
      CSD19535KTTT

      Mfr.#: CSD19535KTTT

      OMO.#: OMO-CSD19535KTTT-TEXAS-INSTRUMENTS

      		 IGBT Transistors MOSFET 100V N-Channel NexFET Power MOSFET
      CSD19531Q5A

      Mfr.#: CSD19531Q5A

      OMO.#: OMO-CSD19531Q5A-TEXAS-INSTRUMENTS

      		 MOSFET N-CH 100V 100A 8SON
      CSD19532Q5B

      Mfr.#: CSD19532Q5B

      OMO.#: OMO-CSD19532Q5B-TEXAS-INSTRUMENTS

      		 Trans MOSFET N-CH Si 100V 100A 8-Pin VSON-CLIP EP T/R
      CSD19536KTT

      Mfr.#: CSD19536KTT

      OMO.#: OMO-CSD19536KTT-TEXAS-INSTRUMENTS

      		 MOSFET N-CH 100V 200A TO263
      Disponibilità
      Azione:
      Available
      Su ordine:
      5500
      Inserisci la quantità:
      Il prezzo attuale di CSD19532Q5B è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      1,34 USD
      1,34 USD
      10
      1,27 USD
      12,68 USD
      100
      1,20 USD
      120,15 USD
      500
      1,13 USD
      567,40 USD
      1000
      1,07 USD
      1 068,00 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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