CSD19535KTTT

Mfr. #:: CSD19535KTTT
Descrizione:: IGBT Transistors MOSFET 100V N-Channel NexFET Power MOSFET
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: CSD19535KTTT Scheda dati
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Maggiori informazioni:: CSD19535KTTT maggiori informazioni CSD19535KTTT Product Details

Attributo del prodotto
Valore attributo

Produttore: Texas Instruments

categoria di prodotto: Transistor - FET, MOSFET - Singoli

Serie: CSD19535KTT

Confezione: Bobina

Unità di peso: 0.068654 oz

Stile di montaggio: SMD/SMT

Nome depositato: NexFET

Pacchetto-Custodia: TO-263-3

Tecnologia: si

Numero di canali: 1 Channel

Configurazione: Separare

Tipo a transistor: 1 N-Channel

Pd-Power-Dissipazione: 300 W

Massima temperatura di esercizio: + 175 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 15 ns

Ora di alzarsi: 18 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 200 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: 2.2 V

Rds-On-Drain-Source-Resistenza: 4.1 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 21 ns

Tempo di ritardo all'accensione tipico: 9 ns

Qg-Gate-Carica: 75 nC

Transconduttanza diretta-Min: 301 S

Modalità canale: Aumento

Tags: CSD19535, CSD1953, CSD19, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD19535KTTT Maggiori informazioni

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

Parte #	Descrizione	Azione	Prezzo
CSD19535KTTT DISTI # 296-41135-1-ND	MOSFET N-CH 100V 200A TO263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1273In Stock	10:$3.5890 1:$4.0200
CSD19535KTTT DISTI # 296-41135-6-ND	MOSFET N-CH 100V 200A TO263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1273In Stock	10:$3.5890 1:$4.0200
CSD19535KTTT DISTI # 296-41135-2-ND	MOSFET N-CH 100V 200A TO263 RoHS: Compliant Min Qty: 50 Container: Tape & Reel (TR)	1250In Stock	250:$2.5784 100:$2.8571 50:$3.1358
CSD19535KTTT DISTI # CSD19535KTTT	Trans MOSFET N-CH 100V 200A 3-Pin TO-263 T/R - Tape and Reel (Alt: CSD19535KTTT) RoHS: Compliant Min Qty: 200 Container: Reel	Americas - 0	200:$1.7900 300:$1.6900 500:$1.5900 1000:$1.5900 2000:$1.4900
CSD19535KTTT	CSD19535KTT 100 V N-Channel NexFET&#153,Power MOSFET	1000	1000:$1.4400 750:$1.5100 500:$1.7900 250:$2.1000 100:$2.2400 25:$2.5600 10:$2.7500 1:$3.0500
CSD19535KTTT DISTI # 595-CSD19535KTTT	MOSFET 100V N-Channel NexFET Power MOSFET RoHS: Compliant	561	1:$3.3500 10:$3.0200 50:$3.0200 100:$2.4700 250:$2.3100 500:$2.1000
CSD19535KTT DISTI # 595-CSD19535KTT	MOSFET CSD19535KTT 100 V N-Channel NexFET Power MOSFET 3-DDPAK/TO-263 RoHS: Compliant	88	1:$3.0200 10:$2.7100 100:$2.2200 250:$2.0800 500:$1.8900
CSD19535KTTT DISTI # 9009885P	NEXFET N-CHANNEL MOSFET 100V 140A D2PAK, RL	230	10:£2.2000 26:£2.1150 50:£2.0300

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: CSD19536KTT OMO.#: OMO-CSD19536KTT	MOSFET 100V, N ch NexFET MOSFETG , single D2PAK, 2.4mOhm 3-DDPAK/TO-263 -55 to 175
	Mfr.#: CSD19531Q5A OMO.#: OMO-CSD19531Q5A	MOSFET 100V 5.3mOhm Pwr MOSFET
	Mfr.#: CSD19535KTT OMO.#: OMO-CSD19535KTT	MOSFET 100V, N ch NexFET MOSFETG , single D2PAK, 3.4mOhm 3-DDPAK/TO-263 -55 to 175
	Mfr.#: CSD19533Q5AT OMO.#: OMO-CSD19533Q5AT	MOSFET 100V, 7.8mOhm SON5x6 N-ch NexFET
	Mfr.#: CSD19503KCS OMO.#: OMO-CSD19503KCS	MOSFET 80V 7.6mOhm N-CH Pwr MOSFET
	Mfr.#: CSD19506KTTT OMO.#: OMO-CSD19506KTTT	MOSFET 80V, N ch NexFET MOSFETG , single D2PAK, 2.3mOhm 3-DDPAK/TO-263 -55 to 175
	Mfr.#: CSD19532KTTT OMO.#: OMO-CSD19532KTTT	MOSFET 100V, N-channel NexFET Pwr MOSFET
	Mfr.#: CSD19536 OMO.#: OMO-CSD19536-TEXAS-INSTRUMENTS	Nuovo e originale
	Mfr.#: CSD19505KTT OMO.#: OMO-CSD19505KTT-TEXAS-INSTRUMENTS	MOSFET N-CH 80V 200A DDPAK-3
	Mfr.#: CSD19538Q2 OMO.#: OMO-CSD19538Q2-TEXAS-INSTRUMENTS	MOSFET NCH 100V 14.4A SON

Disponibilità

Azione:: Available
Su ordine:: 4500
Inserisci la quantità:

Il prezzo attuale di CSD19535KTTT è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~2,16 USD~~; ~~2,16 USD~~

10: ~~2,05 USD~~; ~~20,52 USD~~

100: ~~1,94 USD~~; ~~194,40 USD~~

500: ~~1,84 USD~~; ~~918,00 USD~~

1000: ~~1,73 USD~~; ~~1 728,00 USD~~

Iniziare con

CSD19535 3
CSD1953 28
CSD19 38
CSD1 359
CSD 800

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CSD19535KTTT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes