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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SI5513DC-T1-GE3 DISTI # SI5513DC-T1-GE3-ND | Vishay Siliconix | MOSFET N/P-CH 20V 3.1A 1206-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI5513DC-T1-GE3 DISTI # N/A | Vishay Intertechnologies | MOSFET RoHS: Compliant | 0 |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SI5513DC-T1-GE3 OMO.#: OMO-SI5513DC-T1-GE3 |
MOSFET |
|
|
Mfr.#: SI5513DC-T1-E3 OMO.#: OMO-SI5513DC-T1-E3 |
MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3 |
|
Mfr.#: SI5513D-T1-E3 OMO.#: OMO-SI5513D-T1-E3-1190 |
Nuovo e originale |
|
|
Mfr.#: SI5513DC OMO.#: OMO-SI5513DC-1190 |
Nuovo e originale |
|
|
Mfr.#: SI5513DC-T1 OMO.#: OMO-SI5513DC-T1-1190 |
MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3 |
|
|
Mfr.#: SI5513DC-T1 , MA22D3900L |
Nuovo e originale |
|
Mfr.#: SI5513DC-T1-E3 OMO.#: OMO-SI5513DC-T1-E3-VISHAY |
MOSFET N/P-CH 20V 3.1A 1206-8 |
|
|
Mfr.#: SI5513DC-T1-GE3 OMO.#: OMO-SI5513DC-T1-GE3-VISHAY |
MOSFET N/P-CH 20V 3.1A 1206-8 |
|
|
Mfr.#: SI5513DCT1E3 OMO.#: OMO-SI5513DCT1E3-1190 |
Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET |
