SI5513DC-T1-E3

SI5513DC-T1-E3
Mfr. #:
SI5513DC-T1-E3
Produttore:
Vishay
Descrizione:
MOSFET N/P-CH 20V 3.1A 1206-8
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI5513DC-T1-E3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
SI5513DC-T, SI5513DC, SI5513D, SI5513, SI551, SI55, SI5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N/P-CH Si 20V 3.1A/2.1A 8-Pin Chip FET T/R
***C
Trans MOSFET N/P-CH Si 20V 3.1A/2.1A 8-Pin
***ied Electronics & Automation
MOSFET; 20V N & P CH (D-S) Complementary
***i-Key
MOSFET N/P-CH 20V 3.1A 1206-8
***ser
Dual MOSFETs 20V 4.2/2.9A
***
20V N & P CH (D-S)
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:4.2A; On Resistance, Rds(on):75mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:1206-8 ChipFET ;RoHS Compliant: Yes
***nell
MOSFET, DUAL, NP, 8-1206; Transistor Type:MOSFET; Transistor Polarity:NP; Voltage, Vds Typ:20V; Current, Id Cont:4.2A; Resistance, Rds On:0.075ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1.5V; Case Style:1206-8 ChipFET; Termination Type:SMD
***ment14 APAC
MOSFET, DUAL, NP, 8-1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:1.1W; Transistor Case Style:1206; No. of Pins:8; Current Id Max:4.2A; Package / Case:1206-8 ChipFET; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.5V; Voltage Vgs Rds on Measurement:4.5V
Parte # Mfg. Descrizione Azione Prezzo
SI5513DC-T1-E3
DISTI # SI5513DC-T1-E3TR-ND
Vishay SiliconixMOSFET N/P-CH 20V 3.1A 1206-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    SI5513DC-T1-E3
    DISTI # SI5513DC-T1-E3CT-ND
    Vishay SiliconixMOSFET N/P-CH 20V 3.1A 1206-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SI5513DC-T1-E3
      DISTI # SI5513DC-T1-E3DKR-ND
      Vishay SiliconixMOSFET N/P-CH 20V 3.1A 1206-8
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SI5513DC-T1-E3
        DISTI # 70026247
        Vishay SiliconixMOSFET,20V N & P CH (D-S) Complementary
        RoHS: Compliant
        0
        • 3000:$0.5100
        • 6000:$0.5000
        • 15000:$0.4850
        • 30000:$0.4640
        • 75000:$0.4340
        SI5513DC-T1-E3
        DISTI # 781-SI5513DC-E3
        Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3
        RoHS: Compliant
        0
          SI5513DC-T1
          DISTI # 781-SI5513DC
          Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3
          RoHS: Not compliant
          0
            SI5513DCT1E3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 3.1A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
            RoHS: Compliant
            16060
              SI5513DC-T1-E3
              DISTI # 1470128
              Vishay IntertechnologiesMOSFET, DUAL, NP, 8-12060
              • 500:£0.2270
              • 250:£0.2520
              • 100:£0.2760
              • 10:£0.4140
              • 1:£0.5590
              SI5513DC-T1-E3
              DISTI # 1470128
              Vishay IntertechnologiesMOSFET, DUAL, NP, 8-1206
              RoHS: Compliant
              0
              • 6000:$0.3150
              • 3000:$0.3270
              • 1000:$0.3380
              • 500:$0.3580
              • 250:$0.4210
              • 100:$0.5120
              • 10:$0.6530
              • 1:$0.7890
              Immagine Parte # Descrizione
              SI5513DC-T1-GE3

              Mfr.#: SI5513DC-T1-GE3

              OMO.#: OMO-SI5513DC-T1-GE3

              MOSFET
              SI5513DC-T1-E3

              Mfr.#: SI5513DC-T1-E3

              OMO.#: OMO-SI5513DC-T1-E3

              MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3
              SI5513D-T1-E3

              Mfr.#: SI5513D-T1-E3

              OMO.#: OMO-SI5513D-T1-E3-1190

              Nuovo e originale
              SI5513DC

              Mfr.#: SI5513DC

              OMO.#: OMO-SI5513DC-1190

              Nuovo e originale
              SI5513DC-T1

              Mfr.#: SI5513DC-T1

              OMO.#: OMO-SI5513DC-T1-1190

              MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3
              SI5513DC-T1 , MA22D3900L

              Mfr.#: SI5513DC-T1 , MA22D3900L

              OMO.#: OMO-SI5513DC-T1-MA22D3900L-1190

              Nuovo e originale
              SI5513DC-T1-E3

              Mfr.#: SI5513DC-T1-E3

              OMO.#: OMO-SI5513DC-T1-E3-VISHAY

              MOSFET N/P-CH 20V 3.1A 1206-8
              SI5513DC-T1-GE3

              Mfr.#: SI5513DC-T1-GE3

              OMO.#: OMO-SI5513DC-T1-GE3-VISHAY

              MOSFET N/P-CH 20V 3.1A 1206-8
              SI5513DCT1E3

              Mfr.#: SI5513DCT1E3

              OMO.#: OMO-SI5513DCT1E3-1190

              Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
              Disponibilità
              Azione:
              Available
              Su ordine:
              4000
              Inserisci la quantità:
              Il prezzo attuale di SI5513DC-T1-E3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
              Prezzo di riferimento (USD)
              Quantità
              Prezzo unitario
              est. Prezzo
              1
              0,65 USD
              0,65 USD
              10
              0,62 USD
              6,19 USD
              100
              0,59 USD
              58,59 USD
              500
              0,55 USD
              276,70 USD
              1000
              0,52 USD
              520,80 USD
              A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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