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IRF2903ZSPBF

IRF2903ZSPBF
Mfr. #:
IRF2903ZSPBF
Produttore:
Infineon / IR
Descrizione:
MOSFET 30V 1 N-CH HEXFET 2.4mOhms 160nC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF2903ZSPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF2903ZSPBF DatasheetIRF2903ZSPBF Datasheet (P4-P6)IRF2903ZSPBF Datasheet (P7-P9)IRF2903ZSPBF Datasheet (P10-P11)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-263-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
260 A
Rds On - Resistenza Drain-Source:
2.4 mOhms
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
160 nC
Pd - Dissipazione di potenza:
290 W
Configurazione:
Separare
Confezione:
Tubo
Altezza:
4.4 mm
Lunghezza:
10 mm
Tipo di transistor:
1 N-Channel
Larghezza:
9.25 mm
Marca:
Infineon / IR
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Parte # Alias:
SP001569980
Unità di peso:
0.139332 oz
Tags
IRF2903ZS, IRF2903, IRF290, IRF29, IRF2, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IRF2903ZSPBF N-channel MOSFET Transistor, 235 A, 30 V, 3-Pin D2PAK
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, N D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:260A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:231W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:231mJ; Current Id Max:75A; Fall Time tf:37ns; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Package / Case:D2-PAK; Power Dissipation Pd:231W; Power Dissipation Pd:231W; Pulse Current Idm:1020A; Rise Time:100ns; Storage Temperature Max:175°C; Storage Temperature Min:-55°C; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:0.021V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***ical
Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***emi
N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.1mΩ
***r Electronics
Power Field-Effect Transistor, 34A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***i-Key
MOSFET N-CH 30V 75A D2PAK
***Yang
TO-263AB,SINGLE,NCH,30V,0.0023 OHM LOGIC LEVEL DENSE TRENCH - Bulk
*** Electronic Components
MOSFET N-Ch LL UltraFET PWM Optimized
***nell
MOSFET, N, SMD, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipa
***ineon SCT
30V, N-Ch, 2.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
***ical
Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 30V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 30V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 30V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
***i-Key
MOSFET N-CH 30V 75A D2PAK
*** Electronic Components
MOSFET N-Ch UltraFET Logic Level
***et
TO263AB,SINGLE,NCH,30V,0,0032 OHM LOGIC LVL PWM OPT ULTR
*** Electronics
MOSFET N-CH 25V 80A TO-263
***i-Key
N-CHANNEL POWER MOSFET
***hard Electronics
Power Field-Effect Transistor, 80A I(D), 25V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
***el Nordic
Contact for details
***emi
N-Channel PowerTrench® MOSFET, 30V, 93A, 5.7mΩ
***ure Electronics
N-Channel 30 V 5.7 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB
***et Europe
Trans MOSFET N-CH 30V 19A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 30V, 93A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:93A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Parte # Mfg. Descrizione Azione Prezzo
IRF2903ZSPBF
DISTI # V99:2348_13890430		Infineon Technologies AGTrans MOSFET N-CH Si 30V 235A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		7
  • 100:$2.5810
  • 25:$2.7210
  • 10:$2.9530
  • 1:$3.2800
IRF2903ZSPBF
DISTI # IRF2903ZSPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 75A D2PAK
RoHS: Compliant
Min Qty: 300
Container: Tube		Limited Supply - Call
    IRF2903ZSPBFInternational RectifierPower Field-Effect Transistor, 75A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		250
    • 1000:$1.9100
    • 500:$2.0100
    • 100:$2.1000
    • 25:$2.1900
    • 1:$2.3500
    IRF2903ZSPBF
    DISTI # 942-IRF2903ZSPBF    		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 2.4mOhms 160nC
    RoHS: Compliant    		0
      IRF2903ZSPBF
      DISTI # IRF2903ZSPBF      		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,260A,290W,D2PAK82
      • 1:$2.2800
      • 3:$2.0800
      • 10:$1.7200
      • 100:$1.4300
      IRF2903ZSPBFInternational Rectifier 
      RoHS: Compliant      		Europe - 550
        IRF2903ZSPBF
        DISTI # 1551909        		Infineon Technologies AGMOSFET, N D2-PAK
        RoHS: Compliant        		0
        • 1:$5.3000
        • 10:$4.9500
        • 100:$4.3600
        • 250:$4.0500
        • 500:$3.8400
        • 1000:$3.6500
        IRF2903ZSPBF
        DISTI # C1S322000520929        		Infineon Technologies AGMOSFETs
        RoHS: Compliant        		7
        • 1:$3.4370
        Immagine Parte # Descrizione
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        Mfr.#: IRF2907ZSPBF,IRF2907ZS

        OMO.#: OMO-IRF2907ZSPBF-IRF2907ZS-1190

        		 Nuovo e originale
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        Mfr.#: IRF2907ZSTRLPBF,IRF2907Z

        OMO.#: OMO-IRF2907ZSTRLPBF-IRF2907Z-1190

        		 Nuovo e originale
        IRF2903ZPBF

        Mfr.#: IRF2903ZPBF

        OMO.#: OMO-IRF2903ZPBF-INFINEON-TECHNOLOGIES

        		 Darlington Transistors MOSFET MOSFT 30V 260A 2.4mOhm 160nC Qg
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        Mfr.#: IRF2903ZSPBF

        OMO.#: OMO-IRF2903ZSPBF-INFINEON-TECHNOLOGIES

        		 IGBT Transistors MOSFET 30V 1 N-CH HEXFET 2.4mOhms 160nC
        Disponibilità
        Azione:
        Available
        Su ordine:
        3000
        Inserisci la quantità:
        Il prezzo attuale di IRF2903ZSPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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