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IRF2903ZPBF

IRF2903ZPBF
Mfr. #:
IRF2903ZPBF
Produttore:
Infineon Technologies
Descrizione:
Darlington Transistors MOSFET MOSFT 30V 260A 2.4mOhm 160nC Qg
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF2903ZPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
IRF2903ZPBF maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
IR
categoria di prodotto
FET - Single
Confezione
Tubo
Unità di peso
0.211644 oz
Stile di montaggio
Foro passante
Pacchetto-Custodia
TO-220-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
290 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
37 ns
Ora di alzarsi
100 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
75 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistenza
2.4 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
48 ns
Tempo di ritardo all'accensione tipico
24 ns
Qg-Gate-Carica
160 nC
Transconduttanza diretta-Min
120 S
Modalità canale
Aumento
Tags
IRF2903, IRF290, IRF29, IRF2, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IRF2903ZPBF
DISTI # IRF2903ZPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 75A TO-220AB
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.7732
IRF2903ZPBF
DISTI # SP001561574		Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB (Alt: SP001561574)
RoHS: Compliant
Min Qty: 1		Europe - 350
  • 1:€1.3179
  • 10:€1.1979
  • 25:€1.0979
  • 50:€1.0539
  • 100:€1.0129
  • 500:€0.9759
  • 1000:€0.9409
IRF2903ZPBF
DISTI # IRF2903ZPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF2903ZPBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$1.1809
  • 2000:$1.1379
  • 4000:$1.0969
  • 6000:$1.0599
  • 10000:$1.0409
IRF2903ZPBF
DISTI # 942-IRF2903ZPBF		Infineon Technologies AGMOSFET MOSFT 30V 260A 2.4mOhm 160nC Qg
RoHS: Compliant		0
  • 1:$2.7200
  • 10:$2.3100
  • 100:$2.0000
  • 250:$1.9000
  • 500:$1.7100
  • 1000:$1.4400
IRF2903ZPBF
DISTI # IRF2903ZPBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,260A,290W,TO220AB128
  • 1:$2.1300
  • 3:$1.9200
  • 10:$1.5800
  • 100:$1.3400
IRF2903ZPBFInternational Rectifier 
RoHS: Compliant		Europe - 200
    IRF2903ZPBF
    DISTI # 1551912    		Infineon Technologies AG 
    RoHS: Compliant    		0
    • 1:$4.3100
    • 10:$3.8000
    Immagine Parte # Descrizione
    IRF2903ZLPBF

    Mfr.#: IRF2903ZLPBF

    OMO.#: OMO-IRF2903ZLPBF

    		 MOSFET 30V 1 N-CH HEXFET 2.4mOhms 160nC
    IRF2907ZSPBF

    Mfr.#: IRF2907ZSPBF

    OMO.#: OMO-IRF2907ZSPBF

    		 MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC
    IRF2903ZSTRRP

    Mfr.#: IRF2903ZSTRRP

    OMO.#: OMO-IRF2903ZSTRRP-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 75A D2PAK
    IRF2903ZSTRLP

    Mfr.#: IRF2903ZSTRLP

    OMO.#: OMO-IRF2903ZSTRLP-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 75A D2PAK
    IRF2907Z

    Mfr.#: IRF2907Z

    OMO.#: OMO-IRF2907Z-1190

    		 Nuovo e originale
    IRF2907ZPBF

    Mfr.#: IRF2907ZPBF

    OMO.#: OMO-IRF2907ZPBF-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 75V 75A TO-220AB
    IRF2907ZSPBF,IRF2907ZS

    Mfr.#: IRF2907ZSPBF,IRF2907ZS

    OMO.#: OMO-IRF2907ZSPBF-IRF2907ZS-1190

    		 Nuovo e originale
    IRF2910S

    Mfr.#: IRF2910S

    OMO.#: OMO-IRF2910S-1190

    		 Nuovo e originale
    IRF2903ZSPBF

    Mfr.#: IRF2903ZSPBF

    OMO.#: OMO-IRF2903ZSPBF-INFINEON-TECHNOLOGIES

    		 IGBT Transistors MOSFET 30V 1 N-CH HEXFET 2.4mOhms 160nC
    IRF2907ZLPBF

    Mfr.#: IRF2907ZLPBF

    OMO.#: OMO-IRF2907ZLPBF-INFINEON-TECHNOLOGIES

    		 IGBT Transistors MOSFET MOSFT 75V 170A 4.5mOhm 180nC
    Disponibilità
    Azione:
    Available
    Su ordine:
    3500
    Inserisci la quantità:
    Il prezzo attuale di IRF2903ZPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,56 USD
    1,56 USD
    10
    1,48 USD
    14,83 USD
    100
    1,41 USD
    140,52 USD
    500
    1,33 USD
    663,55 USD
    1000
    1,25 USD
    1 249,10 USD
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