IPD60R600CP

IPD60R600CP
Mfr. #:
IPD60R600CP
Produttore:
Rochester Electronics, LLC
Descrizione:
IGBT Transistors MOSFET N-Ch 600V 6.1A DPAK-2 CoolMOS CP
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPD60R600CP Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
infineon
categoria di prodotto
FET - Single
Serie
CoolMOS CP
Confezione
Bobina
Alias ​​parziali
IPD60R600CPBTMA1 SP000405878
Unità di peso
0.139332 oz
Stile di montaggio
SMD/SMT
Nome depositato
CoolMOS
Pacchetto-Custodia
TO-252-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
60 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
17 ns
Ora di alzarsi
12 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
6.1 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Rds-On-Drain-Source-Resistenza
600 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
75 ns
Tempo di ritardo all'accensione tipico
17 ns
Modalità canale
Aumento
Tags
IPD60R600CP, IPD60R600C, IPD60R60, IPD60R6, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 6.1A 3-Pin(2+Tab) DPAK T/R
*** Source Electronics
CoolMOS Power Transistor
***i-Key
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***nell
MOSFET, N, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.1A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.1A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 650V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
Parte # Mfg. Descrizione Azione Prezzo
IPD60R600CPBTMA1
DISTI # IPD60R600CPBTMA1TR-ND
Infineon Technologies AGMOSFET N-CH 600V 6.1A TO-252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    IPD60R600CPBTMA1
    DISTI # IPD60R600CPBTMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 600V 6.1A TO-252
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IPD60R600CPBTMA1
      DISTI # IPD60R600CPBTMA1DKR-ND
      Infineon Technologies AGMOSFET N-CH 600V 6.1A TO-252
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IPD60R600CPATMA1
        DISTI # IPD60R600CPATMA1-ND
        Infineon Technologies AGMOSFET N-CH 600V 6.1A TO-252
        RoHS: Compliant
        Container: Tape & Reel (TR)
        Limited Supply - Call
          IPD60R600CPATMA1
          DISTI # IPD60R600CPATMA1
          Infineon Technologies AGTrans MOSFET N-CH 600V 6.1A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R600CPATMA1)
          RoHS: Compliant
          Container: Reel
          Americas - 0
            IPD60R600CP
            DISTI # 33P7145
            Infineon Technologies AGMOSFET, N CHANNEL, 650V, 6.1A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:6.1A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.54ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes0
              IPD60R600CP
              DISTI # 726-IPD60R600CP
              Infineon Technologies AGMOSFET N-Ch 600V 6.1A DPAK-2 CoolMOS CP
              RoHS: Compliant
              0
                IPD60R600CPInfineon Technologies AGPower Field-Effect Transistor, 6.1A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
                RoHS: Compliant
                14945
                • 1000:$0.6800
                • 500:$0.7100
                • 100:$0.7400
                • 25:$0.7700
                • 1:$0.8300
                IPD60R600CP
                DISTI # 1664029
                Infineon Technologies AGMOSFET, N, TO-252
                RoHS: Compliant
                70
                • 5:£0.5950
                • 25:£0.5450
                Immagine Parte # Descrizione
                IPD60R360P7ATMA1

                Mfr.#: IPD60R360P7ATMA1

                OMO.#: OMO-IPD60R360P7ATMA1-INFINEON-TECHNOLOGIES

                MOSFET N-CH 650V 9A TO252-3
                IPD60R600P7SAUMA1

                Mfr.#: IPD60R600P7SAUMA1

                OMO.#: OMO-IPD60R600P7SAUMA1-INFINEON-TECHNOLOGIES

                MOSFET N-CH 600V 6A TO252-3
                IPD60R280P7SAUMA1-CUT TAPE

                Mfr.#: IPD60R280P7SAUMA1-CUT TAPE

                OMO.#: OMO-IPD60R280P7SAUMA1-CUT-TAPE-1190

                Nuovo e originale
                IPD60R360P7SAUMA1-CUT TAPE

                Mfr.#: IPD60R360P7SAUMA1-CUT TAPE

                OMO.#: OMO-IPD60R360P7SAUMA1-CUT-TAPE-1190

                Nuovo e originale
                IPD60R1K0CE(1)

                Mfr.#: IPD60R1K0CE(1)

                OMO.#: OMO-IPD60R1K0CE-1--1190

                Nuovo e originale
                IPD60R385CP

                Mfr.#: IPD60R385CP

                OMO.#: OMO-IPD60R385CP-1190

                Trans MOSFET N-CH 600V 9A 3-Pin TO-252 T/R (Alt: IPD60R385CP)
                IPD60R400CEAUMA1

                Mfr.#: IPD60R400CEAUMA1

                OMO.#: OMO-IPD60R400CEAUMA1-INFINEON-TECHNOLOGIES

                Trans MOSFET N-CH 600V 14.7A 3-Pin(2+Tab) DPAK T/R
                IPD60R380P6BTMA1

                Mfr.#: IPD60R380P6BTMA1

                OMO.#: OMO-IPD60R380P6BTMA1-INFINEON-TECHNOLOGIES

                MOSFET N-CH 600V 3TO252
                IPD60R450E6ATMA1

                Mfr.#: IPD60R450E6ATMA1

                OMO.#: OMO-IPD60R450E6ATMA1-INFINEON-TECHNOLOGIES

                RF Bipolar Transistors MOSFET N-Ch 650V 9.2A DPAK-2
                IPD60N10S4L12ATMA1

                Mfr.#: IPD60N10S4L12ATMA1

                OMO.#: OMO-IPD60N10S4L12ATMA1-INFINEON-TECHNOLOGIES

                MOSFET N-CH TO252-3
                Disponibilità
                Azione:
                Available
                Su ordine:
                1500
                Inserisci la quantità:
                Il prezzo attuale di IPD60R600CP è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
                Prezzo di riferimento (USD)
                Quantità
                Prezzo unitario
                est. Prezzo
                1
                1,02 USD
                1,02 USD
                10
                0,97 USD
                9,69 USD
                100
                0,92 USD
                91,80 USD
                500
                0,87 USD
                433,50 USD
                1000
                0,82 USD
                816,00 USD
                A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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