IPD60R600P7SAUMA1

Mfr. #:: IPD60R600P7SAUMA1
Produttore:: Infineon Technologies
Descrizione:: MOSFET N-CH 600V 6A TO252-3
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPD60R600P7SAUMA1 Scheda dati
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Maggiori informazioni:: IPD60R600P7SAUMA1 maggiori informazioni

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Tags: IPD60R600P7S, IPD60R600P7, IPD60R600P, IPD60R60, IPD60R6, IPD60R, IPD60, IPD6, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
Packaging Boxes

IPD60R600P7SAUMA1 Descrizione

***ure Electronics: Single N-Channel 650V 600 mOhm 9 nC CoolMOS Power Mosfet - DPAK

***ical: Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R

***i-Key: MOSFET N-CH 600V 6A TO252-3

***ark: Mosfet, N-Ch, 600V, 6A, 30W, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.49Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 600V, 6A, 30W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.49ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:30W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET CAN N, 600V, 6A, 30W, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.49ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:30W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting

IPD60R600P7SAUMA1 Maggiori informazioni

600V CoolMOS P7 MOSFETs: Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPD60R600P7SAUMA1 DISTI # 33694187	Infineon Technologies AG	Trans MOSFET N-CH 600V 6A T/R	2500	2500:$0.4844
IPD60R600P7SAUMA1 DISTI # IPD60R600P7SAUMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 6A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	25000:$0.2848 12500:$0.2923 5000:$0.3035 2500:$0.3260
IPD60R600P7SAUMA1 DISTI # IPD60R600P7SAUMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 6A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.3705 500:$0.4631 100:$0.5858 10:$0.7640 1:$0.8700
IPD60R600P7SAUMA1 DISTI # IPD60R600P7SAUMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 6A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.3705 500:$0.4631 100:$0.5858 10:$0.7640 1:$0.8700
IPD60R600P7SAUMA1 DISTI # V36:1790_18206086	Infineon Technologies AG	Trans MOSFET N-CH 600V 6A T/R	0	2500000:$0.2494 1250000:$0.2496 250000:$0.2651 25000:$0.2908 2500:$0.2950
IPD60R600P7SAUMA1 DISTI # IPD60R600P7SAUMA1	Infineon Technologies AG	CONSUMER - Tape and Reel (Alt: IPD60R600P7SAUMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.2719 15000:$0.2759 10000:$0.2859 5000:$0.2969 2500:$0.3079
IPD60R600P7SAUMA1 DISTI # SP001658286	Infineon Technologies AG	CONSUMER (Alt: SP001658286) RoHS: Compliant Min Qty: 2500	Europe - 0	25000:€0.2539 15000:€0.2739 10000:€0.2969 5000:€0.3239 2500:€0.3959
IPD60R600P7SAUMA1 DISTI # IPD60R600P7S	Infineon Technologies AG	CONSUMER (Alt: IPD60R600P7S) RoHS: Compliant Min Qty: 2500	Asia - 0
IPD60R600P7SAUMA1 DISTI # 93AC7117	Infineon Technologies AG	MOSFET, N-CH, 600V, 6A, 30W, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.49ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	2265	1000:$0.3460 500:$0.3750 250:$0.4040 100:$0.4330 50:$0.5120 25:$0.5920 10:$0.6710 1:$0.7980
IPD60R600P7SAUMA1 DISTI # 726-IPD60R600P7SAUMA	Infineon Technologies AG	MOSFET CONSUMER RoHS: Compliant	5254	1:$0.7900 10:$0.6640 100:$0.4290 1000:$0.3430
IPD60R600P7SAUMA1	Infineon Technologies AG	Single N-Channel 650V 600 mOhm 9 nC CoolMOS Power Mosfet - DPAK RoHS: Not Compliant	2500Reel	2500:$0.2950
IPD60R600P7SAUMA1 DISTI # XSFP00000131732	Infineon Technologies AG	RoHS: Compliant	5000 in Stock0 on Order	5000:$0.3933 2500:$0.4214
IPD60R600P7SAUMA1 DISTI # 2986469	Infineon Technologies AG	MOSFET, N-CH, 600V, 6A, 30W, TO-252 RoHS: Compliant	2265	100:$0.6740 25:$1.0800 5:$1.1800
IPD60R600P7SAUMA1 DISTI # 2986469	Infineon Technologies AG	MOSFET, N-CH, 600V, 6A, 30W, TO-252	2265	100:£0.4180 10:£0.7100 1:£0.8800

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: IPD60R600P7SAUMA1 OMO.#: OMO-IPD60R600P7SAUMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 6A TO252-3
	Mfr.#: IPD60R600P7ATMA1-CUT TAPE OMO.#: OMO-IPD60R600P7ATMA1-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: IPD60R600C6 (6R600C6) OMO.#: OMO-IPD60R600C6-6R600C6--1190	Nuovo e originale
	Mfr.#: IPD60R600C6BTMA1 OMO.#: OMO-IPD60R600C6BTMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 7.3A TO252
	Mfr.#: IPD60R600CPATMA1 OMO.#: OMO-IPD60R600CPATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 6.1A TO-252
	Mfr.#: IPD60R600E6ATMA1 OMO.#: OMO-IPD60R600E6ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 7.3A TO252
	Mfr.#: IPD60R600E6BTMA1 OMO.#: OMO-IPD60R600E6BTMA1-1190	- Bulk (Alt: IPD60R600E6BTMA1)
	Mfr.#: IPD60R600P7ATMA1 OMO.#: OMO-IPD60R600P7ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 6A TO252-3
	Mfr.#: IPD60R600CP OMO.#: OMO-IPD60R600CP-126	IGBT Transistors MOSFET N-Ch 600V 6.1A DPAK-2 CoolMOS CP
	Mfr.#: IPD60R600C6ATMA1 OMO.#: OMO-IPD60R600C6ATMA1-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET N-Ch 600V 20.2A DPAK-2

Disponibilità

Azione:: Available
Su ordine:: 4000
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Il prezzo attuale di IPD60R600P7SAUMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,40 USD~~; ~~0,40 USD~~

10: ~~0,38 USD~~; ~~3,80 USD~~

100: ~~0,36 USD~~; ~~35,96 USD~~

500: ~~0,34 USD~~; ~~169,85 USD~~

1000: ~~0,32 USD~~; ~~319,70 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

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IPD6 212
IPD 1152

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IPD60R600P7SAUMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes