IPD60R600C

IPD60R600C6ATMA1 vs IPD60R600C6BTMA1 vs IPD60R600CPATMA1

 
PartNumberIPD60R600C6ATMA1IPD60R600C6BTMA1IPD60R600CPATMA1
DescriptionMOSFET N-Ch 600V 20.2A DPAK-2MOSFET N-Ch 600V 7.3A DPAK-2 CoolMOS C6MOSFET N-CH 600V 6.1A TO-252
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current7.3 A7.3 A-
Rds On Drain Source Resistance540 mOhms540 mOhms-
Vgs th Gate Source Threshold Voltage2.5 V2.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge20.5 nC20.5 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation63 W63 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameCoolMOS--
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
SeriesCoolMOS C6XPD60R600-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time13 ns13 ns-
Product TypeMOSFETMOSFET-
Rise Time9 ns9 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time80 ns80 ns-
Typical Turn On Delay Time12 ns12 ns-
Part # AliasesIPD60R600C6 SP001117726IPD60R600C6 IPD60R600C6XT SP000660622-
Unit Weight0.139332 oz0.011993 oz-
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
IPD60R600C6ATMA1 MOSFET N-Ch 600V 20.2A DPAK-2
IPD60R600C6BTMA1 MOSFET N-CH 600V 7.3A TO252
IPD60R600CPATMA1 MOSFET N-CH 600V 6.1A TO-252
IPD60R600CPBTMA1 MOSFET N-CH 600V 6.1A TO-252
IPD60R600C6ATMA1 RF Bipolar Transistors MOSFET N-Ch 600V 20.2A DPAK-2
Infineon Technologies
Infineon Technologies
IPD60R600C6BTMA1 MOSFET N-Ch 600V 7.3A DPAK-2 CoolMOS C6
IPD60R600C6 Trans MOSFET N-CH 600V 7.3A 3-Pin TO-252 T/R (Alt: IPD60R600C6)
IPD60R600C6 (6R600C6) Nuovo e originale
IPD60R600CP IGBT Transistors MOSFET N-Ch 600V 6.1A DPAK-2 CoolMOS CP
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