SIHF22N60S-E3

SIHF22N60S-E3
Mfr. #:
SIHF22N60S-E3
Produttore:
Vishay Siliconix
Descrizione:
IGBT Transistors MOSFET 600V N-Channel Super junction TO-220FP
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHF22N60S-E3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Vishay / Siliconix
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
E
Confezione
Tubo
Unità di peso
0.211644 oz
Stile di montaggio
Foro passante
Pacchetto-Custodia
TO-220-3
Tecnologia
si
Numero di canali
1 Channel
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
250 W
Tempo di caduta
59 ns
Ora di alzarsi
68 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
22 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
4 V
Rds-On-Drain-Source-Resistenza
160 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
77 ns
Tempo di ritardo all'accensione tipico
24 ns
Qg-Gate-Carica
75 nC
Transconduttanza diretta-Min
9.4 S
Tags
SIHF22N60, SIHF22, SIHF2, SIHF, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***C
MOSFET N CHANNEL 600V 22A TO220 MOSFET N CHANNEL 600V 22A TO220
***et
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220 Full-Pak
***ure Electronics
S-Series N-Channel 600 V 0.19 O 98 nC Flange Mount Power Mosfet - TO-220FP
***ment14 APAC
MOSFET, N CH, 600V, 22A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:600V; On Resistance Rds(on):160mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:22A; Power Dissipation Pd:250W; Voltage Vgs Max:20V
Parte # Mfg. Descrizione Azione Prezzo
SIHF22N60S-E3
DISTI # 74R4463
Vishay IntertechnologiesMOSFET, N CHANNEL, 600V, 22A, TO220,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,MSL:- RoHS Compliant: Yes0
    SIHF22N60S-E3
    DISTI # 781-SIHF22N60S-E3
    Vishay IntertechnologiesMOSFET 600V N-Channel Super junction TO-220FP
    RoHS: Compliant
    0
      SIHF22N60S-E3Vishay Intertechnologies 127
        SIHF22N60S-E3
        DISTI # 1794785
        Vishay IntertechnologiesMOSFET, N CH, 600V, 22A, TO220
        RoHS: Compliant
        0
        • 1:£2.8200
        • 10:£2.3300
        • 100:£1.9100
        • 250:£1.8600
        • 500:£1.6700
        Immagine Parte # Descrizione
        SIHF22N60E-GE3

        Mfr.#: SIHF22N60E-GE3

        OMO.#: OMO-SIHF22N60E-GE3

        MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
        SIHF22N60E-E3

        Mfr.#: SIHF22N60E-E3

        OMO.#: OMO-SIHF22N60E-E3

        MOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3
        SIHF22N60E-E3

        Mfr.#: SIHF22N60E-E3

        OMO.#: OMO-SIHF22N60E-E3-VISHAY

        IGBT Transistors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
        SIHF22N60S-E3

        Mfr.#: SIHF22N60S-E3

        OMO.#: OMO-SIHF22N60S-E3-126

        IGBT Transistors MOSFET 600V N-Channel Super junction TO-220FP
        SIHF22N65E-GE3

        Mfr.#: SIHF22N65E-GE3

        OMO.#: OMO-SIHF22N65E-GE3-VISHAY

        RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
        SIHF22N60E-GE3

        Mfr.#: SIHF22N60E-GE3

        OMO.#: OMO-SIHF22N60E-GE3-VISHAY

        RF Bipolar Transistors MOSFET 600V 180mOhms@10V 21A N-Ch E-SRS
        SIHF22N60

        Mfr.#: SIHF22N60

        OMO.#: OMO-SIHF22N60-1190

        Nuovo e originale
        SIHF22N60E

        Mfr.#: SIHF22N60E

        OMO.#: OMO-SIHF22N60E-1190

        Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        SIHF22N65E

        Mfr.#: SIHF22N65E

        OMO.#: OMO-SIHF22N65E-1190

        Nuovo e originale
        SIHF22N6OE-E3

        Mfr.#: SIHF22N6OE-E3

        OMO.#: OMO-SIHF22N6OE-E3-1190

        Nuovo e originale
        Disponibilità
        Azione:
        Available
        Su ordine:
        2500
        Inserisci la quantità:
        Il prezzo attuale di SIHF22N60S-E3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        0,00 USD
        0,00 USD
        10
        0,00 USD
        0,00 USD
        100
        0,00 USD
        0,00 USD
        500
        0,00 USD
        0,00 USD
        1000
        0,00 USD
        0,00 USD
        Iniziare con
        Prodotti più recenti
        • IO-Link™ Devices
          Maxim Integrated’s complete portfolio of IO-link devices integrate value-adding features to provide design flexibility and offload the local processor.
        • Large Diameter Clear Hole Spacers
          RAF's large diameter clear hole spacers for industrial applications are available in standard stock sizes, various materials and finishes, and custom options.
        • Compare SIHF22N60S-E3
          SIHF22N60 vs SIHF22N60E vs SIHF22N60EE3
        • WE-ExB Series Common Mode Power Line Choke
          Wurth's WE-ExB series is the double core made of MnZn and NiZn. Its insertion loss has a range of effect over a broader frequency range than does a single NiZn or MnZn core.
        • CPI2-B1-REU Production Device Programmer
          Phyton's CPI2-B1-REU in-system programmer supports Renesas microcontrollers, memory devices, and MCUs from other manufacturers.
        • CFSH05-20L Schottky Diode
          Central Semiconductor's space saving, low profile Schottky diode for applications including DC-DC conversion and circuit protection.
        Top