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SIHF22N60E-E3 vs SIHF22N60 vs SIHF22N60E

 
PartNumberSIHF22N60E-E3SIHF22N60SIHF22N60E
DescriptionMOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ManufacturerVishayVISHAYVISHAY
Product CategoryMOSFETIC ChipsIC Chips
RoHSY--
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220FP-3--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current21 A--
Rds On Drain Source Resistance180 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge57 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation35 W--
ConfigurationSingleSingleSingle
Channel ModeEnhancement--
PackagingTubeTubeTube
SeriesEEE
BrandVishay / Siliconix--
Fall Time35 ns--
Product TypeMOSFET--
Rise Time27 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time66 ns--
Typical Turn On Delay Time18 ns--
Unit Weight0.211644 oz0.211644 oz0.211644 oz
Tradename-E SeriesE Series
Package Case-TO-220-3TO-220-3
Transistor Type-1 N-Channel1 N-Channel
Pd Power Dissipation-227 W227 W
Vgs Gate Source Voltage-20 V20 V
Id Continuous Drain Current-21 A21 A
Vds Drain Source Breakdown Voltage-600 V600 V
Rds On Drain Source Resistance-180 mOhms180 mOhms
Qg Gate Charge-57 nC57 nC
Forward Transconductance Min-6.4 S6.4 S
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