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| PartNumber | SIHF22N60E-GE3 | SIHF22N65E-GE3 | SIHF22N60E-E3 |
| Description | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | MOSFET 650V Vds 30V Vgs TO-220 FULLPAK | MOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220FP-3 | TO-220FP-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 650 V | 600 V |
| Id Continuous Drain Current | 21 A | 22 A | 21 A |
| Rds On Drain Source Resistance | 180 mOhms | 180 mOhms | 180 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | 4 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 57 nC | 73 nC | 57 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 35 W | 35 W | 35 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Series | E | E | E |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 35 ns | 38 ns | 35 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 27 ns | 33 ns | 27 ns |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 66 ns | 73 ns | 66 ns |
| Typical Turn On Delay Time | 18 ns | 22 ns | 18 ns |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
| Height | - | 15.9 mm | - |
| Length | - | 10.5 mm | - |
| Width | - | 4.69 mm | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHF22N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | |
| SIHF22N65E-GE3 | MOSFET 650V Vds 30V Vgs TO-220 FULLPAK | ||
| SIHF22N60E-E3 | MOSFET RECOMMENDED ALT 781-SIR462DP-T1-GE3 | ||
Vishay |
SIHF22N60E-E3 | IGBT Transistors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS | |
| SIHF22N65E-GE3 | RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS | ||
| SIHF22N60E-GE3 | RF Bipolar Transistors MOSFET 600V 180mOhms@10V 21A N-Ch E-SRS | ||
| SIHF22N60S-E3 | IGBT Transistors MOSFET 600V N-Channel Super junction TO-220FP | ||
| SIHF22N60 | Nuovo e originale | ||
| SIHF22N60E | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| SIHF22N65E | Nuovo e originale | ||
| SIHF22N6OE-E3 | Nuovo e originale |