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GB01SLT12-252

GB01SLT12-252
Mfr. #:
GB01SLT12-252
Produttore:
GeneSiC Semiconductor
Descrizione:
Schottky Diodes & Rectifiers 1200V 1A SiC Schottky Rectifier
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
GB01SLT12-252 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
GB01SLT12-252 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Semiconduttore GeneSiC
Categoria di prodotto:
Diodi e raddrizzatori Schottky
RoHS:
Y
Prodotto:
Diodi Schottky al carburo di silicio
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-263
Se - Corrente diretta:
1 A
Vrrm - Tensione inversa ripetitiva:
1200 V
Vf - Tensione diretta:
1.8 V
Ifsm - Corrente diretta in avanti:
10 A
Tecnologia:
SiC
Ir - Corrente inversa:
4 uA
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Serie:
GB01SLT12
Confezione:
Bobina
Intervallo operativo di temperatura:
- 55 C to + 175 C
Marca:
Semiconduttore GeneSiC
Pd - Dissipazione di potenza:
42 W
Tipologia di prodotto:
Diodi e raddrizzatori Schottky
Quantità confezione di fabbrica:
2500
sottocategoria:
Diodi e raddrizzatori
trr - Tempo di recupero inverso:
17 ns
Unità di peso:
0.056438 oz
Tags
GB01SLT1, GB01SL, GB01S, GB01, GB0
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Rectifier Diode, Schottky, 1 Phase, 1 Element, Silicon Carbide, TO-252
***ical
Rectifier Diode Schottky 1.2KV 5A 3-Pin(2+Tab) TO-252
***ark
SIC SCHOTTKY DIODE, SINGLE, 1A, 1.2KV, TO-252; Product Range:1200V Series; Diode Configuration:Single; Repetitive Peak Reverse Voltage:1.2kV; Average Forward Current:1A; Total Capacitive Charge:13nC; Diode Case Style:TO-252 (DPAK) RoHS Compliant: Yes
***roFlash
Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 2A TO-252-2
***ical
Diode Schottky 1.2KV 5A 3-Pin(2+Tab) TO-252
***ark
SIC SCHOTTKY DIODE, SINGLE, 2A, 1.2KV, TO-252; Product Range:1200V Series; Diode Configuration:Single; Repetitive Peak Reverse Voltage:1.2kV; Average Forward Current:2A; Total Capacitive Charge:14nC; Diode Case Style:TO-252 (DPAK) RoHS Compliant: Yes
1200V & 1700V SiC MPS Schottky Diodes
GeneSiC Semiconductor 1200V and 1700V SiC MPS Schottky Diodes provide low standby power losses and improved circuit efficiency. The 1200V SiC Diodes have a forward current range of 1A to 200A. The 1700V SiC Diodes have a forward current range of 5A to 50A. Both the 1200V and 1700V Schottky Diodes offer the advantage of paralleling devices without a thermal runaway. Additional features include low reverse recovery current, low device capacitance, and low reverse leakage current. The SiC MPS Schottky Diodes are ideal for a wide range of applications including LED lighting, medical imaging systems, high voltage sensing, and electric vehicles.
GB01SLT Silicon Carbide Power Schottky Diodes
GeneSic Semiconductors GB01SLT Silicon Carbide (SiC) Schottky Diodes offer low standby power/switching losses, low leakage/recovery currents, and superior surge current capability. The GB01SLT SiC Schottky Diodes also provide extremely fast switching speeds and low device capacitance. Housed in a compact package, the 650V and 1200V diodes operate in a temperature range from -55°C to 175°C. The diodes supply a zero reverse current that does not change with the temperature. GB01SLT's exceptional switching characteristics allow the elimination or dramatic reduction of voltage balancing networks and snubber circuits. Applications include solar/wind turbine inverters, induction heating, motor drives, switched mode power supplies (SMPS), uninterruptible power supplies (UPS), power factor correction (PFC), and high voltage multipliers.Learn More
Parte # Mfg. Descrizione Azione Prezzo
GB01SLT12-252
DISTI # 1242-1126-1-ND		GeneSic Semiconductor IncDIODE SILICON 1.2KV 1A TO252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3498In Stock
  • 1000:$1.9294
  • 500:$2.2877
  • 250:$2.5495
  • 100:$2.8252
  • 25:$3.1008
  • 10:$3.4450
  • 1:$3.8600
GB01SLT12-252
DISTI # 1242-1126-6-ND		GeneSic Semiconductor IncDIODE SILICON 1.2KV 1A TO252
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3498In Stock
  • 1000:$1.9294
  • 500:$2.2877
  • 250:$2.5495
  • 100:$2.8252
  • 25:$3.1008
  • 10:$3.4450
  • 1:$3.8600
GB01SLT12-252
DISTI # 1242-1126-2-ND		GeneSic Semiconductor IncDIODE SILICON 1.2KV 1A TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$1.7850
GB01SLT12-252
DISTI # 905-GB01SLT12-252		GeneSic Semiconductor IncSchottky Diodes & Rectifiers 1200V 1A SiC Schottky Rectifier
RoHS: Compliant		0
  • 1:$2.7700
  • 10:$2.5000
  • 25:$2.2300
  • 100:$2.0100
  • 250:$1.7900
  • 500:$1.5600
  • 1000:$1.3000
  • 2500:$1.2100
  • 5000:$1.1600
GB01SLT12-252GeneSic Semiconductor Inc 
RoHS: Compliant		50 In Stock
  • 2500:$1.1100
  • 1875:$1.1300
  • 1250:$1.4300
  • 625:$2.3200
  • 250:$2.4400
  • 100:$2.5700
  • 25:$2.7000
  • 1:$2.8400
GB01SLT12-252
DISTI # GB01SLT12252		GeneSic Semiconductor Inc 50
  • 1:$5.2200
  • 25:$4.9600
  • 100:$4.7100
  • 250:$4.4700
  • 625:$4.2500
  • 1250:$2.2500
  • 1875:$1.5800
  • 2500:$1.5500
Immagine Parte # Descrizione
BUX85G

Mfr.#: BUX85G

OMO.#: OMO-BUX85G

 Bipolar Transistors - BJT 2A 450V 50W NPN
FGD5T120SH

Mfr.#: FGD5T120SH

OMO.#: OMO-FGD5T120SH

 IGBT Transistors 1200V 5A Field Stop Trench IGBT
C2M0080120D

Mfr.#: C2M0080120D

OMO.#: OMO-C2M0080120D

 MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
C2M0080120D

Mfr.#: C2M0080120D

OMO.#: OMO-C2M0080120D-WOLFSPEED

 MOSFET N-CH 1200V 31.6A TO247
CRCW0805200KFKEAC

Mfr.#: CRCW0805200KFKEAC

OMO.#: OMO-CRCW0805200KFKEAC-VISHAY-DALE

 D12/CRCW0805-C 100 200K 1% ET1
C0805F104K5RACAUTO

Mfr.#: C0805F104K5RACAUTO

OMO.#: OMO-C0805F104K5RACAUTO-KEMET

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.1uF 50volts 10% X7R
C0805C102K5RACTU

Mfr.#: C0805C102K5RACTU

OMO.#: OMO-C0805C102K5RACTU-KEMET

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 50volts 1000pF X7R 10%
BUX85G

Mfr.#: BUX85G

OMO.#: OMO-BUX85G-ON-SEMICONDUCTOR

 Bipolar Transistors - BJT 2A 450V 50W NPN
FGD5T120SH

Mfr.#: FGD5T120SH

OMO.#: OMO-FGD5T120SH-ON-SEMICONDUCTOR

 IGBT 1200V 5A FS3 DPAK
Disponibilità
Azione:
Available
Su ordine:
1985
Inserisci la quantità:
Il prezzo attuale di GB01SLT12-252 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,77 USD
2,77 USD
10
2,50 USD
25,00 USD
25
2,23 USD
55,75 USD
100
2,01 USD
201,00 USD
250
1,79 USD
447,50 USD
500
1,56 USD
780,00 USD
1000
1,30 USD
1 300,00 USD
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