1N3214 features high surge capability and types up to 600 V VRRM.
Data: 2013-01-31MBR60040CT, 600 A silicon power schottky diode features high surge capability and types up to 100 V VRRM.
Data: 2013-01-31MBR40044CT, 400 A Schottky diode features high surge capability and types up to 100 V VRRM.
Data: 2013-01-31Silicon Carbide Power Schottky Diode feature superior surge current capability and positive temperature coefficient of Vf.
Data: 2019-02-19GeneSiC is offering and continuously improving innovative Silicon Carbide power rectifiers for high voltage rating applications, with significant advantages.
Data: 2015-08-28Features superior surge current capability, positive temperature coefficient of Vf, superior figure of merit Qc/If and much more.
Data: 2013-02-06Silicon Carbide Transistor advantages include low switching losses, higher efficiency, high temperature operation and high short circuit withstand capability.
Data: 2013-02-05