T1G2028536-FL

T1G2028536-FL
Mfr. #:
T1G2028536-FL
Produttore:
Qorvo
Descrizione:
RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
T1G2028536-FL Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
T1G2028536-FL maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
TriQuint (Qorvo)
categoria di prodotto
Schede e kit di valutazione e dimostrazione
Prodotto
Commissioni di valutazione
Tipo
Transistor RF
Confezione
Massa
Alias ​​parziali
1111296
Da-usare con
T1G2028536-FL
Frequenza
1.4 GHz
Descrizione-Funzione
1.2 1.4 GHz evaluation board
Lo strumento-è-per-la-valutazione
T1G2028536-FL
Tags
T1G2028536, T1G2, T1G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Parte # Mfg. Descrizione Azione Prezzo
T1G2028536-FL
DISTI # 772-T1G2028536-FL
QorvoRF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN
RoHS: Compliant
12
  • 1:$508.0000
T1G2028536-FL/FS 1.2-1.4GHz EVB5
DISTI # 772-T1G2028536-EVAL
QorvoRF Development Tools DC-2GHz P3dB 260W Eval Board
RoHS: Compliant
0
  • 1:$875.0000
1111394
DISTI # T1G2028536-FL
QorvoRF POWER TRANSISTOR
RoHS: Compliant
31
  • 1:$378.7500
Immagine Parte # Descrizione
T1G2028536-FS

Mfr.#: T1G2028536-FS

OMO.#: OMO-T1G2028536-FS

RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN
T1G2028536-FL

Mfr.#: T1G2028536-FL

OMO.#: OMO-T1G2028536-FL

RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN
T1G2028536-FL

Mfr.#: T1G2028536-FL

OMO.#: OMO-T1G2028536-FL-318

RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN
T1G2028536-FS

Mfr.#: T1G2028536-FS

OMO.#: OMO-T1G2028536-FS-318

RF JFET Transistors DC-2GHz P3dB 260W Gain [email protected] GaN
T1G2028536-FL/FS 1.2-1.4GHz EVB5

Mfr.#: T1G2028536-FL/FS 1.2-1.4GHz EVB5

OMO.#: OMO-T1G2028536-FL-FS-1-2-1-4GHZ-EVB5-1152

RF Development Tools DC-2GHz P3dB 260W Eval Board
T1G2028535-FL

Mfr.#: T1G2028535-FL

OMO.#: OMO-T1G2028535-FL-1190

Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
3000
Inserisci la quantità:
Il prezzo attuale di T1G2028536-FL è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
762,00 USD
762,00 USD
10
723,90 USD
7 239,00 USD
100
685,80 USD
68 580,00 USD
500
647,70 USD
323 850,00 USD
1000
609,60 USD
609 600,00 USD
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