IXTY3N60P

IXTY3N60P
Mfr. #:
IXTY3N60P
Produttore:
IXYS
Descrizione:
Darlington Transistors MOSFET 3 Amps 600V 3 Rds
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXTY3N60P Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
IXYS
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
IXTY3N60
Confezione
Tubo
Unità di peso
0.012346 oz
Stile di montaggio
SMD/SMT
Nome depositato
PolarHV
Pacchetto-Custodia
TO-252-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
70 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
22 ns
Ora di alzarsi
25 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuo-Scarico-Corrente
3 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
5.5 V
Rds-On-Drain-Source-Resistenza
2.9 Ohms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
58 ns
Tempo di ritardo all'accensione tipico
25 ns
Qg-Gate-Carica
9.8 nC
Transconduttanza diretta-Min
2.2 S
Modalità canale
Aumento
Tags
IXTY3, IXTY, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 2.9 Ohm 70 W Power Mosfet - TO-252
***ical
Trans MOSFET N-CH 600V 3A 3-Pin(2+Tab) DPAK
***nell
MOSFET, N, D-PAK; Transistor Type:Standard; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:3A; Resistance, Rds On:2.9ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5.5V; Case Style:DPAK; Termination Type:SMD; Capacitance, Ciss Typ:411pF; Charge, Gate N-channel:9.8nC; Pins, No. of:3; Power, Pd:70W; Thermal Resistance, Junction to Case A:1.8°C/W; Voltage, Vds Max:600V; Time, trr Max:500ns
***et
Trans MOSFET N-CH 600V 3.7A 3-Pin TO-252 T/R
***ical
600V N-CHANNEL ENHANCEMENT MODE MOSFET
***i-Key
MOSFET BVDSS: 501V 650V TO252 T&
***ineon SCT
Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS Power Mosfet - TO-252-3, PG-TO252-3, RoHS
***Yang
Transistor MOSFET N-CH 600V 3.7A 3-Pin TO-252 T/R - Tape and Reel
***ark
Mosfet, N-Ch, 600V, 3.7A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):1.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***ical
Trans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) DPAK T/R
***et
Trans MOSFET N-CH 650V 2.3A 3-Pin TO-252 T/R
***ronik
N-CH 600V 2,3A 2100mOhm TO252
***emi
N-Channel QFET® MOSFET 600V, 2.8A, 2.5Ω
***nsix Microsemi
Power Field-Effect Transistor, 3.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ical
MOSFET 600V, NCH MOSFET
***i-Key
MOSFET N-CH 600V 2.8A DPAK
***el Electronic
IC SUPERVISOR 1 CHANNEL 5SSOP
***ure Electronics
Single N-Channel 500 V 2.2 Ohm 135 nC HEXFET® Power Mosfet - TO-252AA
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED
***ineon SCT
500V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***icroelectronics
N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package
***ure Electronics
N-Channel 600 V 3.5 A 1.4 Ohm Surface Mount MDmesh II Plus Mosfet - DPAK
***r Electronics
Power Field-Effect Transistor, 3.5A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Parte # Mfg. Descrizione Azione Prezzo
IXTY3N60P
DISTI # IXTY3N60P-ND
IXYS CorporationMOSFET N-CH 600V 3A D-PAK
RoHS: Compliant
Min Qty: 70
Container: Tube
Limited Supply - Call
  • 70:$1.2936
IXTY3N60P
DISTI # 747-IXTY3N60P
IXYS CorporationMOSFET 3 Amps 600V 3 Rds
RoHS: Compliant
2970
  • 1:$1.5000
  • 10:$1.3500
  • 25:$1.1800
  • 50:$1.1000
  • 100:$1.0900
  • 250:$0.8820
  • 500:$0.8460
  • 1000:$0.7010
  • 2500:$0.5880
Immagine Parte # Descrizione
IXTY08N100P-TRL

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OMO.#: OMO-IXTY4N65X2

MOSFET DISCMSFT NCHULTRAJNCTN X2CLASS
IXTY05N100

Mfr.#: IXTY05N100

OMO.#: OMO-IXTY05N100-1190

Nuovo e originale
IXTY12N06TTRL

Mfr.#: IXTY12N06TTRL

OMO.#: OMO-IXTY12N06TTRL-IXYS-CORPORATION

MOSFET N-CH 60V 12A TO-252
IXTY06N120P

Mfr.#: IXTY06N120P

OMO.#: OMO-IXTY06N120P-IXYS-CORPORATION

MOSFET N-CH 1200V 90A TO-252
IXTY18P10T TRL

Mfr.#: IXTY18P10T TRL

OMO.#: OMO-IXTY18P10T-TRL-1190

IXTY18P10T TRL
IXTY10P15T

Mfr.#: IXTY10P15T

OMO.#: OMO-IXTY10P15T-IXYS-CORPORATION

MOSFET TrenchP Power MOSFET
IXTY02N120P

Mfr.#: IXTY02N120P

OMO.#: OMO-IXTY02N120P-IXYS-CORPORATION

MOSFET 0.2Amps 1200V
IXTY2N60P

Mfr.#: IXTY2N60P

OMO.#: OMO-IXTY2N60P-IXYS-CORPORATION

IGBT Transistors MOSFET 2.0 Amps 600 V 4.7 Ohm Rds
Disponibilità
Azione:
Available
Su ordine:
2000
Inserisci la quantità:
Il prezzo attuale di IXTY3N60P è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,88 USD
0,88 USD
10
0,84 USD
8,38 USD
100
0,79 USD
79,38 USD
500
0,75 USD
374,85 USD
1000
0,71 USD
705,60 USD
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