SIHD7N60ET-GE3

Mfr. #:: SIHD7N60ET-GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SIHD7N60ET-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:: SIHD7N60ET-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: TO-252-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 600 V

Id - Corrente di scarico continua:: 7 A

Rds On - Resistenza Drain-Source:: 600 mOhms

Vgs th - Tensione di soglia gate-source:: 4 V

Vgs - Tensione Gate-Source:: 30 V

Qg - Carica cancello:: 20 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 78 W

Configurazione:: Separare

Modalità canale:: Aumento

Confezione:: Bobina

Serie:: E

Marca:: Vishay / Siliconix

Tempo di caduta:: 14 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 13 ns

Quantità confezione di fabbrica:: 2000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 24 ns

Tempo di ritardo di accensione tipico:: 13 ns

Unità di peso:: 0.050717 oz

Tags: SIHD7N60ET, SIHD7, SIHD, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHD7N60ET-GE3 Maggiori informazioni

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SIHD7N60ET-GE3 DISTI # 78-SIHD7N60ET-GE3	Vishay Intertechnologies	MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS RoHS: Compliant	0	2000:$0.8750 4000:$0.8430

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SIHD7N60ET1-GE3 OMO.#: OMO-SIHD7N60ET1-GE3	MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
	Mfr.#: SIHD7N60ET4-GE3 OMO.#: OMO-SIHD7N60ET4-GE3	MOSFET 600V Vds E Series DPAK TO-252
	Mfr.#: SIHD7N60ET-GE3 OMO.#: OMO-SIHD7N60ET-GE3	MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
	Mfr.#: SIHD7N60ET5-GE3 OMO.#: OMO-SIHD7N60ET5-GE3	MOSFET 600V Vds E Series DPAK TO-252
	Mfr.#: SIHD7N60ETR-GE3 OMO.#: OMO-SIHD7N60ETR-GE3-317	RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
	Mfr.#: SIHD7N60ETL-GE3 OMO.#: OMO-SIHD7N60ETL-GE3-317	RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
	Mfr.#: SIHD7N60E-GE3-CUT TAPE OMO.#: OMO-SIHD7N60E-GE3-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: SIHD7N60E OMO.#: OMO-SIHD7N60E-1190	Nuovo e originale
	Mfr.#: SIHD7N60EGE3 OMO.#: OMO-SIHD7N60EGE3-1190	Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
	Mfr.#: SIHD7N60ET4-GE3 OMO.#: OMO-SIHD7N60ET4-GE3-VISHAY	MOSFET N-CH 600V 7A TO252AA

Disponibilità

Azione:: Available
Su ordine:: 5500
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Il prezzo attuale di SIHD7N60ET-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

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SIHD7N60ET-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes