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SIHD7N60ET4-GE3

SIHD7N60ET4-GE3
Mfr. #:
SIHD7N60ET4-GE3
Produttore:
Vishay
Descrizione:
MOSFET N-CH 600V 7A TO252AA
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHD7N60ET4-GE3 Scheda dati
Consegna:
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ECAD Model:
Maggiori informazioni:
SIHD7N60ET4-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Tags
SIHD7N60ET, SIHD7, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 7A 3-Pin TO-252
***i-Key
MOSFET N-CH 600V 7A TO252AA
***ark
N-Channel 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descrizione Azione Prezzo
SIHD7N60ET4-GE3
DISTI # V36:1790_17600263		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK0
  • 3000000:$0.7772
  • 1500000:$0.7774
  • 300000:$0.7882
  • 30000:$0.8052
  • 3000:$0.8080
SIHD7N60ET4-GE3
DISTI # SIHD7N60ET4-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 7A TO252AA
RoHS: Not compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.8080
SIHD7N60ET4-GE3
DISTI # SIHD7N60ET4-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin TO-252 - Tape and Reel (Alt: SIHD7N60ET4-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.7299
  • 18000:$0.7499
  • 12000:$0.7719
  • 6000:$0.8049
  • 3000:$0.8289
SIHD7N60ET4-GE3
DISTI # 78-SIHD7N60ET4-GE3		Vishay IntertechnologiesMOSFET 600V Vds E Series DPAK TO-252
RoHS: Compliant		0
  • 1:$1.7700
  • 10:$1.4700
  • 100:$1.1400
  • 500:$0.9970
  • 1000:$0.8260
  • 3000:$0.7690
  • 6000:$0.7410
  • 9000:$0.7120
Immagine Parte # Descrizione
SIHD7N60ET1-GE3

Mfr.#: SIHD7N60ET1-GE3

OMO.#: OMO-SIHD7N60ET1-GE3

 MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60E-GE3

Mfr.#: SIHD7N60E-GE3

OMO.#: OMO-SIHD7N60E-GE3

 MOSFET 600V Vds 30V Vgs DPAK (TO-252)
SIHD7N60ET4-GE3

Mfr.#: SIHD7N60ET4-GE3

OMO.#: OMO-SIHD7N60ET4-GE3

 MOSFET 600V Vds E Series DPAK TO-252
SIHD7N60ET5-GE3

Mfr.#: SIHD7N60ET5-GE3

OMO.#: OMO-SIHD7N60ET5-GE3

 MOSFET 600V Vds E Series DPAK TO-252
SIHD7N60ETR-GE3

Mfr.#: SIHD7N60ETR-GE3

OMO.#: OMO-SIHD7N60ETR-GE3-317

 RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60ETL-GE3

Mfr.#: SIHD7N60ETL-GE3

OMO.#: OMO-SIHD7N60ETL-GE3-317

 RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60ET-GE3

Mfr.#: SIHD7N60ET-GE3

OMO.#: OMO-SIHD7N60ET-GE3-317

 RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS
SIHD7N60E

Mfr.#: SIHD7N60E

OMO.#: OMO-SIHD7N60E-1190

 Nuovo e originale
SIHD7N60EGE3

Mfr.#: SIHD7N60EGE3

OMO.#: OMO-SIHD7N60EGE3-1190

 Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
SIHD7N60ET4-GE3

Mfr.#: SIHD7N60ET4-GE3

OMO.#: OMO-SIHD7N60ET4-GE3-VISHAY

 MOSFET N-CH 600V 7A TO252AA
Disponibilità
Azione:
Available
Su ordine:
2000
Inserisci la quantità:
Il prezzo attuale di SIHD7N60ET4-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,07 USD
1,07 USD
10
1,01 USD
10,15 USD
100
0,96 USD
96,12 USD
500
0,91 USD
453,90 USD
1000
0,85 USD
854,40 USD
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