ZXMHC6A07 stock, ZXMHC6A07, ZXMHC6A07T8TA


PartNumber	ZXMHC6A07T8TA	ZXMHC6A07N8TC
Description	MOSFET 60V UMOS H-Bridge	MOSFET Mosfet H-Bridge 60/-60V 1.8/-1.4A
Manufacturer	Diodes Incorporated	Diodes Incorporated
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	SM-8	SO-8
Number of Channels	4 Channel	4 Channel
Transistor Polarity	N-Channel, P-Channel	N-Channel, P-Channel
Vds Drain Source Breakdown Voltage	60 V	60 V
Id Continuous Drain Current	1.8 A, 1.5 A	1.8 A, 1.42 A
Rds On Drain Source Resistance	300 mOhms, 425 mOhms	250 mOhms, 400 mOhms
Vgs th Gate Source Threshold Voltage	1 V	1 V
Vgs Gate Source Voltage	10 V	10 V
Qg Gate Charge	3.2 nC, 5.1 nC	3.2 nC, 5.7 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Pd Power Dissipation	1.3 W	0.87 W
Configuration	Quad	Quad
Channel Mode	Enhancement	Enhancement
Packaging	Reel	Reel
Height	1.6 mm	-
Length	6.7 mm	-
Product	MOSFET Small Signal	-
Series	ZXMHC6A	ZXMHC6
Transistor Type	2 N-Channel, 2 P-Channel	2 N-Channel, 2 P-Channel
Type	MOSFET	-
Width	3.7 mm	-
Brand	Diodes Incorporated	Diodes Incorporated
Forward Transconductance Min	2.3 S, 1.8 S	2.3 S, 1.8 S
Fall Time	2 ns, 5.8 ns	2 ns, 5.8 ns
Product Type	MOSFET	MOSFET
Rise Time	1.4 ns, 2.3 ns	1.4 ns, 2.3 ns
Factory Pack Quantity	1000	2500
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	4.9 ns, 13 ns	4.9 ns, 13 ns
Typical Turn On Delay Time	1.8 ns, 1.6 ns	1.8 ns, 1.6 ns
Unit Weight	0.002610 oz	0.002610 oz

Search Part Number : "ZXMHC6A07", Match & Start with "ZXMHC6A07" - Total : 8

Produttore	Parte #	Descrizione
Diodes Incorporated	ZXMHC6A07T8TA	MOSFET 60V UMOS H-Bridge
	ZXMHC6A07N8TC	MOSFET Mosfet H-Bridge 60/-60V 1.8/-1.4A
	ZXMHC6A07N8TC	Trans MOSFET N/P-CH 60V 1.8A/1.42A Automotive 8-Pin SO T/R
	ZXMHC6A07T8TA	Darlington Transistors MOSFET 60V UMOS H-Bridge
	ZXMHC6A07	Nuovo e originale
	ZXMHC6A07T8	Nuovo e originale
	ZXMHC6A07N8TC-CUT TAPE	Nuovo e originale
	ZXMHC6A07T8TA-CUT TAPE	Nuovo e originale

ZXMHC6A07