UMY1NT

UMY1NTR vs UMY1NTN vs UMY1NTR , L1085S-1.8

 
PartNumberUMY1NTRUMY1NTNUMY1NTR , L1085S-1.8
DescriptionBipolar Transistors - BJT NPN/PNP 50V 150MA
ManufacturerROHM Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-353-5--
Transistor PolarityNPN, PNP--
ConfigurationDual--
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO- 6 V, 7 V--
Collector Emitter Saturation Voltage- 0.5 V, 0.4 V--
Maximum DC Collector Current0.15 A--
Gain Bandwidth Product fT140 MHz, 180 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesUMY1N--
DC Current Gain hFE Max560--
Height0.9 mm--
Length2 mm--
PackagingReel--
Width1.25 mm--
BrandROHM Semiconductor--
Continuous Collector Current150 mA--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation150 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesUMY1N--
Unit Weight0.000212 oz--
Produttore Parte # Descrizione RFQ
UMY1NTR Bipolar Transistors - BJT NPN/PNP 50V 150MA
UMY1NTN Nuovo e originale
UMY1NTR , L1085S-1.8 Nuovo e originale
UMY1NTR TRANS NPN/PNP 50V 0.15A 5UMT
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