TSM2311C

TSM2311CX RFG vs TSM2311CX vs TSM2311CX RF

 
PartNumberTSM2311CX RFGTSM2311CXTSM2311CX RF
DescriptionMOSFET 20V P channel MosfetMOSFET 20V P channel MOSFET
ManufacturerTaiwan SemiconductorTSC-
Product CategoryMOSFETIC Chips-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4 A--
Rds On Drain Source Resistance45 mOhms--
Vgs th Gate Source Threshold Voltage450 mV--
Vgs Gate Source Voltage10 V--
Qg Gate Charge6 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation900 mW--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
ProductRectifiers--
Transistor Type1 P-Channel1 P-Channel-
BrandTaiwan Semiconductor--
Forward Transconductance Min9 S--
Fall Time25 ns35 ns-
Product TypeMOSFET--
Rise Time35 ns35 ns-
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns45 ns-
Typical Turn On Delay Time22 ns22 ns-
Packaging-Reel-
Part Aliases-RFG-
Unit Weight-0.050717 oz-
Package Case-SOT-23-3-
Pd Power Dissipation-900 mW-
Vgs Gate Source Voltage-8 V-
Id Continuous Drain Current-- 4 A-
Vds Drain Source Breakdown Voltage-- 20 V-
Vgs th Gate Source Threshold Voltage-- 1.4 V-
Rds On Drain Source Resistance-55 mOhms-
Produttore Parte # Descrizione RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM2311CX RFG MOSFET 20V P channel Mosfet
TSM2311CX RFG MOSFET P-CHANNEL 20V 4A SOT23
TSM2311CX MOSFET 20V P channel MOSFET
TSM2311CX RF Nuovo e originale
TSM2311CXRF Nuovo e originale
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