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| PartNumber | TJ60S06M3L(T6L1,NQ | TJ60S06M3L(T6L1NQ | TJ60S06M3L(T6L1NQ-ND |
| Description | MOSFET P-Ch MOS -60A -60V 100W 7760pF 0.0112 | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 60 A | - | - |
| Rds On Drain Source Resistance | 11.2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 156 nC | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 100 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | TJ60S06M3L | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 5.5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 250 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 100 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 970 ns | - | - |
| Typical Turn On Delay Time | 127 ns | - | - |
| Unit Weight | 0.011993 oz | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Toshiba |
TJ60S06M3L(T6L1,NQ | MOSFET P-Ch MOS -60A -60V 100W 7760pF 0.0112 | |
| TJ60S06M3L(T6L1,NQ | MOSFET P-Ch MOS -60A -60V 100W 7760pF 0.0112 | ||
| TJ60S06M3L(T6L1NQ | Nuovo e originale | ||
| TJ60S06M3L(T6L1NQ-ND | Nuovo e originale |