| PartNumber | TJ60S06M3L(T6L1,NQ | TJ60S04M3L(T6L1,NQ |
| Description | MOSFET P-Ch MOS -60A -60V 100W 7760pF 0.0112 | MOSFET P-Ch MOS -60A -40V 90W 6510pF 0.0063 |
| Manufacturer | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 40 V |
| Id Continuous Drain Current | 60 A | 60 A |
| Rds On Drain Source Resistance | 11.2 mOhms | 6.3 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | - |
| Vgs Gate Source Voltage | 10 V | - |
| Qg Gate Charge | 156 nC | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 100 W | 90 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Packaging | Reel | Reel |
| Height | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm |
| Series | TJ60S06M3L | TJ60S04M3L |
| Transistor Type | 1 P-Channel | 1 P-Channel |
| Width | 5.5 mm | 5.5 mm |
| Brand | Toshiba | Toshiba |
| Fall Time | 250 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 100 ns | - |
| Factory Pack Quantity | 2000 | 2000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 970 ns | - |
| Typical Turn On Delay Time | 127 ns | - |
| Unit Weight | 0.011993 oz | 0.011993 oz |