STQ1HN

STQ1HNK60R-AP vs STQ1HN60K3-AP

 
PartNumberSTQ1HNK60R-APSTQ1HN60K3-AP
DescriptionMOSFET POWER MOSFETMOSFET N-Ch 600V 6.4 Ohm 1.2A SuperMESH3 FET
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-92-3TO-92-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V
Id Continuous Drain Current400 mA400 mA
Rds On Drain Source Resistance8.5 Ohms6.7 Ohms
Vgs Gate Source Voltage30 V30 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation30 W3 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
Height4.95 mm-
Length4.95 mm-
SeriesSTQ1HNK60RSTQ1HN60K3-AP
Transistor Type1 N-Channel1 N-Channel
Width3.94 mm-
BrandSTMicroelectronicsSTMicroelectronics
Fall Time25 ns31 ns
Product TypeMOSFETMOSFET
Rise Time5 ns10 ns
Factory Pack Quantity20002000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time19 ns23 ns
Typical Turn On Delay Time6.5 ns7 ns
Unit Weight0.007760 oz0.007760 oz
Vgs th Gate Source Threshold Voltage-3.75 V
Qg Gate Charge-9.5 nC
Tradename-SuperMESH
Packaging-Ammo Pack
Produttore Parte # Descrizione RFQ
STMicroelectronics
STMicroelectronics
STQ1HNK60R-AP MOSFET POWER MOSFET
STQ1HN60K3-AP MOSFET N-Ch 600V 6.4 Ohm 1.2A SuperMESH3 FET
STQ1HN60K3-AP MOSFET N-CH 600V 0.4A TO-92
STQ1HNK60R-AP MOSFET N-CH 600V 400MA TO-92
STQ1HNC60 Nuovo e originale
STQ1HNK60-R Nuovo e originale
STQ1HNK60R-AT Nuovo e originale
STQ1HNK60RAP Nuovo e originale
STQ1HNK60Z Nuovo e originale
STQ1HNK60 Nuovo e originale
STQ1HNK60R Nuovo e originale
STQ1HNK60R-AR Nuovo e originale
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