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| PartNumber | STD7N65M2 | STD7N65M6 | STD7N65 |
| Description | MOSFET N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a DPAK package | MOSFET | MOSFET, N CHANNEL, 650V, 5A, TO-252-3 |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | DPAK-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 5 A | 5 A | - |
| Rds On Drain Source Resistance | 1.15 Ohms | 990 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 2.25 V | - |
| Vgs Gate Source Voltage | 25 V | 10 V | - |
| Qg Gate Charge | 9 nC | 6.9 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 60 W | 60 W | - |
| Configuration | Single | Single | - |
| Tradename | MDmesh | - | MDmesh |
| Packaging | Reel | - | Reel |
| Product | Power MOSFET | - | - |
| Series | STD7N65M2 | - | MDmesh M2 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 20 ns | 12.4 ns | 20 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 20 ns | 4.5 ns | 20 ns |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 30 ns | 21.4 ns | 30 ns |
| Typical Turn On Delay Time | 8 ns | 6.5 ns | 8 ns |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Channel Mode | - | Enhancement | - |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 60 W |
| Vgs Gate Source Voltage | - | - | 25 V |
| Id Continuous Drain Current | - | - | 5 A |
| Vds Drain Source Breakdown Voltage | - | - | 650 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Rds On Drain Source Resistance | - | - | 1.15 Ohms |
| Qg Gate Charge | - | - | 9 nC |
