STB8NM

STB8NM60D vs STB8NM60T4 vs STB8NM60N

 
PartNumberSTB8NM60DSTB8NM60T4STB8NM60N
DescriptionMOSFET N Ch 600V 0.9Ohm 8AMOSFET N-Ch 650 Volt 5 AmpMOSFET N-ch 600 Volts 7 Amp
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3TO-263-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V600 V
Id Continuous Drain Current8 A8 A7 A
Rds On Drain Source Resistance1 Ohms900 mOhms650 mOhms
Vgs Gate Source Voltage30 V30 V25 V
Minimum Operating Temperature- 65 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation100 W100 W70 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameMDmeshMDmesh-
PackagingReelReelReel
Height4.6 mm4.6 mm4.6 mm
Length10.4 mm10.4 mm10.4 mm
SeriesSTB8NM60DSTB8NM60STx8NM60N
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width9.35 mm9.35 mm9.35 mm
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Fall Time8 ns10 ns10 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time10 ns10 ns12 ns
Factory Pack Quantity100010001000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time26 ns23 ns40 ns
Typical Turn On Delay Time13 ns14 ns10 ns
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Type-MOSFET-
Produttore Parte # Descrizione RFQ
STMicroelectronics
STMicroelectronics
STB8NM60D MOSFET N Ch 600V 0.9Ohm 8A
STB8NM60T4 MOSFET N-Ch 650 Volt 5 Amp
STB8NM60N MOSFET N-ch 600 Volts 7 Amp
STB8NM60T4 IGBT Transistors MOSFET N-Ch 650 Volt 5 Amp
STB8NM60N MOSFET N-CH 600V 7A D2PAK
STB8NM60D MOSFET N-CH 600V 8A D2PAK
STB8NM60T4-CUT TAPE Nuovo e originale
STB8NM60 Nuovo e originale
STB8NM60T4-TR Nuovo e originale
Top