SSM6L36

SSM6L36FE,LM vs SSM6L36FE vs SSM6L36FELAPM

 
PartNumberSSM6L36FE,LMSSM6L36FESSM6L36FELAPM
DescriptionMOSFET Small-signal MOSFET 2-in-1MOSFET N/P-CH 0.5A ES-6, RL
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseES6-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current500 mA, 330 mA--
Rds On Drain Source Resistance460 mOhms, 950 mOhms--
Vgs th Gate Source Threshold Voltage350 mV, 1 V--
Vgs Gate Source Voltage10 V, 8 V--
Qg Gate Charge1.23 nC, 1.2 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation150 mW--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height0.55 mm--
Length1.6 mm--
SeriesSSM6L36--
Transistor Type1 N-Channel, 1 P-Channel--
Width1.2 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time75 ns, 200 ns--
Typical Turn On Delay Time30 ns, 90 ns--
Produttore Parte # Descrizione RFQ
Toshiba
Toshiba
SSM6L36FE,LM MOSFET Small-signal MOSFET 2-in-1
SSM6L36FE MOSFET N/P-CH 0.5A ES-6, RL
SSM6L36FELAPM Nuovo e originale
SSM6L36FELM Nuovo e originale
SSM6L36FETE85LF Transisto
SSM6L36TU Nuovo e originale
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