SPD02N80

SPD02N80C3ATMA1 vs SPD02N80C3 vs SPD02N80C3BTMA1

 
PartNumberSPD02N80C3ATMA1SPD02N80C3SPD02N80C3BTMA1
DescriptionMOSFET LOW POWER_LEGACYIGBT Transistors MOSFET N-Ch 800V 2A DPAK-2 CoolMOS C3MOSFET N-CH 800V 2A TO-252
ManufacturerInfineonINFINEON-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePG-TO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current2 A--
Rds On Drain Source Resistance2.7 Ohms--
Vgs th Gate Source Threshold Voltage2.1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge12 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation42 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameCoolMOS--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
SeriesCoolMOS C3--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Fall Time18 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time72 ns--
Typical Turn On Delay Time25 ns--
Part # AliasesSP001117754 SPD02N80C3--
Unit Weight0.139332 oz--
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
SPD02N80C3ATMA1 MOSFET LOW POWER_LEGACY
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SPD02N80C3BTMA1 MOSFET N-CH 800V 2A TO-252
SPD02N80C3 IGBT Transistors MOSFET N-Ch 800V 2A DPAK-2 CoolMOS C3
SPD02N80C3ATMA1-CUT TAPE Nuovo e originale
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SPD02N80C3,02N80C3 Nuovo e originale
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