SPD02N80C3ATMA1

SPD02N80C3ATMA1
Mfr. #:
SPD02N80C3ATMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 800V 2A 3TO252
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SPD02N80C3ATMA1 Scheda dati
Consegna:
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ECAD Model:
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SPD02N80C3ATMA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Tags
SPD02N80C, SPD02N8, SPD02N, SPD02, SPD0, SPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 2.7 mOhm 16 nC CoolMOS™ Power Mosfet - PG-TO252-3
***ment14 APAC
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:2A; Package / Case:TO-252; Power Dissipation Pd:42W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descrizione Azione Prezzo
SPD02N80C3ATMA1
DISTI # V72:2272_06384511
Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
200
  • 100:$0.7028
  • 25:$0.8210
  • 10:$1.0034
  • 1:$1.1660
SPD02N80C3ATMA1
DISTI # V36:1790_06384511
Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
0
  • 2500000:$0.3821
  • 1250000:$0.3824
  • 250000:$0.4111
  • 25000:$0.4631
  • 2500:$0.4719
SPD02N80C3ATMA1
DISTI # SPD02N80C3ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 800V 2A 3TO252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2336In Stock
  • 1000:$0.5321
  • 500:$0.6740
  • 100:$0.8159
  • 10:$1.0460
  • 1:$1.1700
SPD02N80C3ATMA1
DISTI # SPD02N80C3ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 800V 2A 3TO252
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2336In Stock
  • 1000:$0.5321
  • 500:$0.6740
  • 100:$0.8159
  • 10:$1.0460
  • 1:$1.1700
SPD02N80C3ATMA1
DISTI # SPD02N80C3ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 800V 2A 3TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
On Order
  • 12500:$0.4408
  • 5000:$0.4581
  • 2500:$0.4822
SPD02N80C3ATMA1
DISTI # 33925009
Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2500
  • 25000:$0.4171
  • 15000:$0.4197
  • 10000:$0.4345
  • 5000:$0.4504
  • 2500:$0.4672
SPD02N80C3ATMA1
DISTI # 32336490
Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
200
  • 100:$0.7028
  • 25:$0.8210
  • 14:$1.0034
SPD02N80C3ATMA1
DISTI # SPD02N80C3ATMA1
Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin TO-252 T/R - Tape and Reel (Alt: SPD02N80C3ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.4168
  • 15000:$0.4243
  • 10000:$0.4391
  • 5000:$0.4556
  • 2500:$0.4726
SPD02N80C3ATMA1
DISTI # SP001117754
Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin TO-252 T/R (Alt: SP001117754)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 25000:€0.4149
  • 15000:€0.4469
  • 10000:€0.4839
  • 5000:€0.5279
  • 2500:€0.6459
SPD02N80C3ATMA1
DISTI # 33P8203
Infineon Technologies AGMOSFET, N CHANNEL, 800V, 2A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:800V,On Resistance Rds(on):2.4ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 1000:$0.4970
  • 500:$0.6300
  • 250:$0.6720
  • 100:$0.7130
  • 50:$0.7850
  • 25:$0.8560
  • 10:$0.9280
  • 1:$1.0800
SPD02N80C3ATMA1.
DISTI # 15AC0583
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:800V,On Resistance Rds(on):2.4ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:42W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 25000:$0.4170
  • 15000:$0.4250
  • 10000:$0.4390
  • 5000:$0.4560
  • 1:$0.4730
SPD02N80C3ATMA1
DISTI # 726-SPD02N80C3ATMA1
Infineon Technologies AGMOSFET LOW POWER_LEGACY
RoHS: Compliant
45955
  • 1:$1.0700
  • 10:$0.9190
  • 100:$0.7060
  • 500:$0.6240
  • 1000:$0.4920
SPD02N80C3ATMA1Infineon Technologies AGSingle N-Channel 800 V 2.7 mOhm 16 nC CoolMOS Power Mosfet - PG-TO252-3
RoHS: Not Compliant
100Cut Tape/Mini-Reel
  • 1:$0.6150
  • 50:$0.5300
  • 100:$0.5200
  • 250:$0.5000
  • 500:$0.4900
SPD02N80C3ATMA1
DISTI # 1664105
Infineon Technologies AGMOSFET, N, TO-252229
  • 500:£0.4810
  • 250:£0.5130
  • 100:£0.5440
  • 10:£0.7660
  • 1:£0.9410
Immagine Parte # Descrizione
SPD02N80C3ATMA1

Mfr.#: SPD02N80C3ATMA1

OMO.#: OMO-SPD02N80C3ATMA1

MOSFET LOW POWER_LEGACY
SPD02N80C3

Mfr.#: SPD02N80C3

OMO.#: OMO-SPD02N80C3-126

IGBT Transistors MOSFET N-Ch 800V 2A DPAK-2 CoolMOS C3
SPD02N80C3ATMA1-CUT TAPE

Mfr.#: SPD02N80C3ATMA1-CUT TAPE

OMO.#: OMO-SPD02N80C3ATMA1-CUT-TAPE-1190

Nuovo e originale
SPD02N80C3ATMA1

Mfr.#: SPD02N80C3ATMA1

OMO.#: OMO-SPD02N80C3ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 800V 2A 3TO252
SPD02N80C3BTMA1

Mfr.#: SPD02N80C3BTMA1

OMO.#: OMO-SPD02N80C3BTMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 800V 2A TO-252
SPD02N80

Mfr.#: SPD02N80

OMO.#: OMO-SPD02N80-1190

Nuovo e originale
SPD02N80C3,02N80C3

Mfr.#: SPD02N80C3,02N80C3

OMO.#: OMO-SPD02N80C3-02N80C3-1190

Nuovo e originale
SPD02N80C3.

Mfr.#: SPD02N80C3.

OMO.#: OMO-SPD02N80C3--1190

Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
3500
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Il prezzo attuale di SPD02N80C3ATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,57 USD
0,57 USD
10
0,54 USD
5,44 USD
100
0,52 USD
51,58 USD
500
0,49 USD
243,60 USD
1000
0,46 USD
458,50 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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