SIHP30N60E stock, SIHP30N60E, SIHP30N60E-GE3


PartNumber	SIHP30N60E-GE3	SIHP30N60E-E3
Description	MOSFET 600V Vds 30V Vgs TO-220AB	MOSFET 600V Vds 30V Vgs TO-220AB
Manufacturer	Vishay	Vishay
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	Through Hole	Through Hole
Package / Case	TO-220AB-3	TO-220AB-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	600 V	600 V
Id Continuous Drain Current	29 A	29 A
Rds On Drain Source Resistance	125 mOhms	125 mOhms
Vgs th Gate Source Threshold Voltage	2.8 V	2.8 V
Vgs Gate Source Voltage	30 V	30 V
Qg Gate Charge	85 nC	85 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Pd Power Dissipation	250 W	250 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Packaging	Tube	Tube
Height	15.49 mm	15.49 mm
Length	10.41 mm	10.41 mm
Series	E	E
Width	4.7 mm	4.7 mm
Brand	Vishay / Siliconix	Vishay / Siliconix
Fall Time	36 ns	36 ns
Product Type	MOSFET	MOSFET
Rise Time	32 ns	32 ns
Factory Pack Quantity	50	50
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	63 ns	63 ns
Typical Turn On Delay Time	19 ns	19 ns
Unit Weight	0.211644 oz	0.211644 oz

Search Part Number : "SIHP30N60E", Match & Start with "SIHP30N60E" - Total : 8

Produttore	Parte #	Descrizione
Vishay / Siliconix	SIHP30N60E-GE3	MOSFET 600V Vds 30V Vgs TO-220AB
Vishay / Siliconix	SIHP30N60E-E3	MOSFET 600V Vds 30V Vgs TO-220AB
Vishay	SIHP30N60E-GE3	IGBT Transistors MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
Vishay	SIHP30N60E-E3	MOSFET N-CH 600V 29A TO220AB
	SIHP30N60E	Nuovo e originale
	SIHP30N60E-GE3,SIHP30N60	Nuovo e originale
	SIHP30N60E-GE3,SIHP30N60E,	Nuovo e originale
	SIHP30N60EGE3	Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

SIHP30N60E