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SIHP30N60E-E3

SIHP30N60E-E3
Mfr. #:
SIHP30N60E-E3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 600V Vds 30V Vgs TO-220AB
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHP30N60E-E3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHP30N60E-E3 DatasheetSIHP30N60E-E3 Datasheet (P4-P6)SIHP30N60E-E3 Datasheet (P7-P8)
ECAD Model:
Maggiori informazioni:
SIHP30N60E-E3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220AB-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
29 A
Rds On - Resistenza Drain-Source:
125 mOhms
Vgs th - Tensione di soglia gate-source:
2.8 V
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
85 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
250 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Altezza:
15.49 mm
Lunghezza:
10.41 mm
Serie:
E
Larghezza:
4.7 mm
Marca:
Vishay / Siliconix
Tempo di caduta:
36 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
32 ns
Quantità confezione di fabbrica:
50
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
63 ns
Tempo di ritardo di accensione tipico:
19 ns
Unità di peso:
0.211644 oz
Tags
SIHP30N60E, SIHP30, SIHP3, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, 600V, 29A, TO-220AB; Transistor Polarity:N Channel; Continuous Dra
***ow.cn
SIHP30N60E-E3 Vishay MOSFETs Transistor N-CH 600V 29A 3-Pin(3+Tab) TO-220AB - Arrow.com
***ure Electronics
E-Series N-Channel 600 V 0.125 O 130 nC Flange Mount Power Mosfet- TO-220AB
***et
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220AB
***nell
MOSFET, N CH, 600V, 29A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descrizione Azione Prezzo
SIHP30N60E-E3
DISTI # V99:2348_09218745		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220AB
RoHS: Compliant		1000
  • 3000:$2.8590
  • 1000:$2.9580
  • 100:$4.2560
  • 25:$4.3330
  • 10:$4.8140
  • 1:$6.5274
SIHP30N60E-E3
DISTI # V36:1790_09218745		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220AB
RoHS: Compliant		0
    SIHP30N60E-E3
    DISTI # SIHP30N60E-E3-ND    		Vishay SiliconixMOSFET N-CH 600V 29A TO220AB
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		976In Stock
    • 3000:$3.0100
    • 1000:$3.1605
    • 100:$4.4021
    • 25:$5.0792
    • 10:$5.3730
    • 1:$5.9800
    SIHP30N60E-E3
    DISTI # 28977885    		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220AB
    RoHS: Compliant    		1000
    • 1000:$3.2313
    • 500:$3.8281
    • 100:$4.7203
    • 10:$5.1750
    • 3:$7.0749
    SIHP30N60E-E3
    DISTI # SIHP30N60E-E3    		Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: SIHP30N60E-E3)
    RoHS: Not Compliant
    Min Qty: 1000
    Container: Tube    		Americas - 0
    • 10000:$2.6900
    • 6000:$2.7900
    • 4000:$2.8900
    • 2000:$2.9900
    • 1000:$3.0900
    SIHP30N60E-GE3
    DISTI # 78-SIHP30N60E-GE3    		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
    RoHS: Compliant    		857
    • 1:$6.0200
    • 10:$4.9800
    • 100:$4.1000
    • 250:$3.9700
    SIHP30N60E-E3
    DISTI # 781-SIHP30N60E-E3    		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
    RoHS: Compliant    		0
    • 1000:$3.0000
    SIHP30N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
    RoHS: Compliant    		Americas -
      Immagine Parte # Descrizione
      SIHP30N60AEL-GE3

      Mfr.#: SIHP30N60AEL-GE3

      OMO.#: OMO-SIHP30N60AEL-GE3

      		 MOSFET 600V Vds 30V Vgs TO-220AB
      SIHP30N60E-GE3

      Mfr.#: SIHP30N60E-GE3

      OMO.#: OMO-SIHP30N60E-GE3

      		 MOSFET 600V Vds 30V Vgs TO-220AB
      SIHP30N60E-E3

      Mfr.#: SIHP30N60E-E3

      OMO.#: OMO-SIHP30N60E-E3

      		 MOSFET 600V Vds 30V Vgs TO-220AB
      SIHP30N60E-GE3

      Mfr.#: SIHP30N60E-GE3

      OMO.#: OMO-SIHP30N60E-GE3-VISHAY

      		 IGBT Transistors MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
      SIHP30N60AEL-GE3

      Mfr.#: SIHP30N60AEL-GE3

      OMO.#: OMO-SIHP30N60AEL-GE3-VISHAY

      		 MOSFET N-CHAN 600V TO-220AB
      SIHP30N60E-E3

      Mfr.#: SIHP30N60E-E3

      OMO.#: OMO-SIHP30N60E-E3-VISHAY

      		 MOSFET N-CH 600V 29A TO220AB
      SIHP30N60E

      Mfr.#: SIHP30N60E

      OMO.#: OMO-SIHP30N60E-1190

      		 Nuovo e originale
      SIHP30N60E-GE3,SIHP30N60

      Mfr.#: SIHP30N60E-GE3,SIHP30N60

      OMO.#: OMO-SIHP30N60E-GE3-SIHP30N60-1190

      		 Nuovo e originale
      SIHP30N60E-GE3,SIHP30N60E,

      Mfr.#: SIHP30N60E-GE3,SIHP30N60E,

      OMO.#: OMO-SIHP30N60E-GE3-SIHP30N60E--1190

      		 Nuovo e originale
      SIHP30N60EGE3

      Mfr.#: SIHP30N60EGE3

      OMO.#: OMO-SIHP30N60EGE3-1190

      		 Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      Disponibilità
      Azione:
      Available
      Su ordine:
      3000
      Inserisci la quantità:
      Il prezzo attuale di SIHP30N60E-E3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1000
      3,00 USD
      3 000,00 USD
      3000
      2,85 USD
      8 550,00 USD
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