 | | | |
| PartNumber | SIHP16N50C-E3 | SIHP17N60D-E3 | SIHP17N60D-GE3 |
| Description | MOSFET N-Channel 500V | MOSFET 600V Vds 30V Vgs TO-220AB | MOSFET 600V Vds 30V Vgs TO-220AB |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220AB-3 | TO-220AB-3 | TO-220AB-3 |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 600 V | 600 V |
| Id Continuous Drain Current | 16 A | 17 A | 17 A |
| Rds On Drain Source Resistance | 380 mOhms | 340 mOhms | 340 mOhms |
| Vgs th Gate Source Threshold Voltage | 5 V | 5 V | 5 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 45 nC | 45 nC | 45 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 250 W | 277.8 W | 277.8 W |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Height | 15.49 mm | - | - |
| Length | 10.41 mm | - | - |
| Width | 4.7 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 31 ns | 30 ns | 30 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 156 ns | 56 ns | 56 ns |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 29 ns | 37 ns | 37 ns |
| Typical Turn On Delay Time | 27 ns | 22 ns | 22 ns |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
| Series | - | D | D |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHP180N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | |
| SIHP17N80E-GE3 | MOSFET 800V Vds 30V Vgs TO-220AB | ||
| SIHP16N50C-E3 | MOSFET N-Channel 500V | ||
| SIHP18N50C-E3 | MOSFET 500V Vds 30V Vgs TO-220AB | ||
| SIHP186N60EF-GE3 | MOSFET Power MOSFET | ||
| SIHP17N60D-E3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
| SIHP17N60D-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
| SIHP18N60E-GE3 | MOSFET 600V Vds 30V Vgs TO-220AB | ||
Vishay |
SIHP17N60D-E3 | IGBT Transistors MOSFET 600V 340mOhm@10V 17A N-Ch D-SRS | |
| SIHP17N60D-GE3 | RF Bipolar Transistors MOSFET 600V 17A 277.8W 340mOhm @10V | ||
| SIHP17N80E-GE3 | MOSFET N-CH 800V 15A TO220AB | ||
| SIHP16N50C-E3 | MOSFET N-CH 500V 16A TO-220AB | ||
| SIHP18N50C-E3 | MOSFET N-CH 500V 18A TO220 | ||
| SIHP180N60E-GE3 | E Series Power MOSFET TO-220AB, 180 m @ 10V | ||
| SIHP18N60E-GE3 | MOSFET N-CH 600V 18A TO220AB | ||
| SIHP15N65EGE3 | Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| SIHP16N50C | Nuovo e originale | ||
| SIHP17N60D | Nuovo e originale | ||
| SIHP18N50C | Nuovo e originale | ||
| SIHP18N50C-E3,SIHP18N50C | Nuovo e originale | ||
| SIHP18N50CE3 | Power Field-Effect Transistor, 18A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |