SIHP

SIHP16N50C-E3 vs SIHP15N65E-GE3 vs SIHP17N60D-E3

 
PartNumberSIHP16N50C-E3SIHP15N65E-GE3SIHP17N60D-E3
DescriptionMOSFET N-Channel 500VMOSFET 650V Vds 30V Vgs TO-220ABMOSFET 600V Vds 30V Vgs TO-220AB
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220AB-3TO-220AB-3TO-220AB-3
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V650 V600 V
Id Continuous Drain Current16 A15 A17 A
Rds On Drain Source Resistance380 mOhms280 mOhms340 mOhms
Vgs th Gate Source Threshold Voltage5 V4 V5 V
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge45 nC48 nC45 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation250 W34 W277.8 W
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeTubeTube
Height15.49 mm15.49 mm-
Length10.41 mm10.41 mm-
Width4.7 mm4.7 mm-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time31 ns25 ns30 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time156 ns24 ns56 ns
Factory Pack Quantity505050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time29 ns48 ns37 ns
Typical Turn On Delay Time27 ns18 ns22 ns
Unit Weight0.211644 oz0.211644 oz0.211644 oz
Series-ED
Produttore Parte # Descrizione RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHP22N60EF-GE3 MOSFET Nch 600V Vds 30V Vgs TO-220AB; w/diode
SIHP180N60E-GE3 MOSFET 600V Vds 30V Vgs TO-220AB
SIHP22N60AEL-GE3 MOSFET 600V Vds 30V Vgs TO-220AB
SIHP22N60AE-GE3 MOSFET 600V Vds 30V Vgs TO-220AB
SIHP17N80E-GE3 MOSFET 800V Vds 30V Vgs TO-220AB
SIHP22N60E-E3 MOSFET 600V Vds 30V Vgs TO-220AB
SIHP22N60E-GE3 MOSFET 600V Vds 30V Vgs TO-220AB
SIHP16N50C-E3 MOSFET N-Channel 500V
SIHP20N50E-GE3 MOSFET 500V Vds 30V Vgs TO-220AB
SIHP18N50C-E3 MOSFET 500V Vds 30V Vgs TO-220AB
SIHP15N65E-GE3 MOSFET 650V Vds 30V Vgs TO-220AB
SIHP21N60EF-GE3 MOSFET 600V Vds 30V Vgs TO-220AB
SIHP186N60EF-GE3 MOSFET Power MOSFET
SIHP21N80AE-GE3 MOSFET 850V Vds; 30V Vgs TO-220AB
SIHP17N60D-E3 MOSFET 600V Vds 30V Vgs TO-220AB
SIHP17N60D-GE3 MOSFET 600V Vds 30V Vgs TO-220AB
SIHP21N65EF-GE3 MOSFET 650V Vds 30V Vgs TO-220AB
SIHP18N60E-GE3 MOSFET 600V Vds 30V Vgs TO-220AB
SIHP22N60EL-GE3 MOSFET 600V Vds 30V Vgs TO-220AB
Vishay
Vishay
SIHP17N60D-E3 IGBT Transistors MOSFET 600V 340mOhm@10V 17A N-Ch D-SRS
SIHP15N60E-GE3 IGBT Transistors MOSFET 600V 280mOhm@10V 15A N-Ch E-SRS
SIHP20N50E-GE3 IGBT Transistors MOSFET N-Channel 500V
SIHP21N65EF-GE3 RF Bipolar Transistors MOSFET 650V 180mOhms@10V 21A N-Ch EF-SRS
SIHP15N65E-GE3 RF Bipolar Transistors MOSFET 650V 280mOhm@10V 15A N-Ch E-SRS
SIHP17N60D-GE3 RF Bipolar Transistors MOSFET 600V 17A 277.8W 340mOhm @10V
SIHP17N80E-GE3 MOSFET N-CH 800V 15A TO220AB
SIHP22N60AEL-GE3 MOSFET N-CHAN 600V
SIHP16N50C-E3 MOSFET N-CH 500V 16A TO-220AB
SIHP18N50C-E3 MOSFET N-CH 500V 18A TO220
SIHP21N60EF-GE3 MOSFET N-CH 600V 21A TO-220AB
SIHP22N60E-E3 MOSFET N-CH 600V 21A TO220AB
SIHP22N60E-GE3 MOSFET N-CH 600V 21A TO220AB
SIHP180N60E-GE3 E Series Power MOSFET TO-220AB, 180 m @ 10V
SIHP18N60E-GE3 MOSFET N-CH 600V 18A TO220AB
SIHP21N80AE-GE3 E Series Power MOSFET TO-220AB, 235 m @ 10V
SIHP22N60AE-GE3 MOSFET N-CH 600V 20A TO220AB
SIHP22N60EL-GE3 MOSFET N-CH 600V 21A TO220AB
SIHP15N60EGE3 Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
SIHP15N65EGE3 Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
SIHP16N50C Nuovo e originale
SIHP17N60D Nuovo e originale
SIHP18N50C Nuovo e originale
SIHP18N50C-E3,SIHP18N50C Nuovo e originale
SIHP18N50CE3 Power Field-Effect Transistor, 18A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
SIHP22N60E Nuovo e originale
SIHP22N60E-E3 P22N60E Nuovo e originale
SIHP22N60E-E3,SIHP22N60S Nuovo e originale
SIHP22N60EE3 Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
SIHP22N60EGE3 Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
SIHP22N60EF-GE3 MOSFET N-CHAN 600V TO-220AB
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