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| PartNumber | SIHF520STRR-GE3 | SIHF520STRL-GE3 | SIHF520 |
| Description | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 9.2 A | 9.2 A | - |
| Rds On Drain Source Resistance | 270 mOhms | 270 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 16 nC | 16 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 60 W | 60 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 2.7 S | 2.7 S | - |
| Fall Time | 20 ns | 20 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 30 ns | 30 ns | - |
| Factory Pack Quantity | 800 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 19 ns | 19 ns | - |
| Typical Turn On Delay Time | 8.8 ns | 8.8 ns | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHF520STRR-GE3 | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | |
| SIHF520STRL-GE3 | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | ||
| SIHF520 | Nuovo e originale |