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| PartNumber | RW1E015RPT2R | RW1E015RP | RW1E015RP T2R |
| Description | MOSFET 4V Drive Pch MOSFET Drive Pch | ||
| Manufacturer | ROHM Semiconductor | - | ROHM |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-563-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 1.5 A | - | - |
| Rds On Drain Source Resistance | 270 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 6.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 700 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.65 mm | - | - |
| Length | 1.7 mm | - | - |
| Product | MOSFET | - | - |
| Series | RW1E015RP | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Type | Power MOSFET | - | - |
| Width | 1.4 mm | - | - |
| Brand | ROHM Semiconductor | - | - |
| Forward Transconductance Min | 1.2 S | - | - |
| Fall Time | 13 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8 ns | - | - |
| Factory Pack Quantity | 8000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 40 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Part # Aliases | RW1E015RP | - | - |
| Unit Weight | 0.000106 oz | - | - |