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| PartNumber | RN1117MFV(TPL3) | RN1117MFV | RN1117MFV(TL3,T) |
| Description | Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 10Kohms x 4.7Kohms | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 10kohm |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y | Y |
| Transistor Polarity | NPN | - | - |
| Typical Input Resistor | 10 kOhms | - | - |
| Typical Resistor Ratio | 2.13 | - | - |
| Mounting Style | SMD/SMT | - | - |
| DC Collector/Base Gain hfe Min | 30 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | RN1117MFV | RN1117MFV | RN1117MFV |
| Packaging | Reel | - | Reel |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 15 V | - | - |
| Height | 1.2 mm | - | - |
| Length | 1.2 mm | - | - |
| Operating Temperature Range | - 65 C to + 150 C | - | - |
| Type | NPN Epitaxial Silicon Transistor | - | - |
| Width | 0.5 mm | - | - |
| Brand | Toshiba | Toshiba | Toshiba |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 8000 | 3000 | 8000 |
| Subcategory | Transistors | Transistors | Transistors |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Toshiba |
RN1117MFV(TPL3) | Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 10Kohms x 4.7Kohms | |
| RN1117MFV | Bipolar Transistors - Pre-Biased | ||
| RN1117MFV,L3F | Bipolar Transistors - Pre-Biased Bias Resistor NPN .1A 50V 10kohm | ||
| RN1117MFV(TL3,T) | Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 10kohm | ||
| RN1117MFV(TPL3) | Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 10Kohms x 4.7Kohms | ||
| RN1117MFVL3F-ND | Nuovo e originale | ||
| RN1117MFV | Bipolar Transistors - Pre-Biased |