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| PartNumber | RN1117MFV | RN1117MFV(TL3,T) | RN1117(T5L,F,T) |
| Description | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased Bias Resistor NPN 100mA 50V 10kohm | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y | Y |
| Series | RN1117MFV | RN1117MFV | RN1117 |
| Brand | Toshiba | Toshiba | Toshiba |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 3000 | 8000 | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Packaging | - | Reel | Reel |
| Configuration | - | - | Single |
| Transistor Polarity | - | - | NPN |
| Typical Input Resistor | - | - | 10 kOhms |
| Typical Resistor Ratio | - | - | 2.13 |
| Mounting Style | - | - | SMD/SMT |
| Package / Case | - | - | SOT-416-3 |
| DC Collector/Base Gain hfe Min | - | - | 30 |
| Collector Emitter Voltage VCEO Max | - | - | 50 V |
| Continuous Collector Current | - | - | 100 mA |
| Pd Power Dissipation | - | - | 100 mW |
| Emitter Base Voltage VEBO | - | - | 15 V |
| Maximum DC Collector Current | - | - | 100 mA |
| Unit Weight | - | - | 0.000212 oz |