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| PartNumber | RCD100N19TL | RCD100N20TL |
| Description | MOSFET 4V Drive Nch Power MOSFET | MOSFET PWR MOSFET LOW RESIST DEVICE |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 190 V | 200 V |
| Id Continuous Drain Current | 10 A | 10 A |
| Rds On Drain Source Resistance | 130 mOhms | 140 mOhms |
| Vgs th Gate Source Threshold Voltage | 500 mV | 3.25 V |
| Vgs Gate Source Voltage | 20 V | 30 V |
| Qg Gate Charge | 52 nC | 25 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 85 W | 85 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Series | RCD100N19 | RCD100N20 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | ROHM Semiconductor | ROHM Semiconductor |
| Fall Time | 75 ns | 15 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 20 ns | 35 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 140 ns | 40 ns |
| Typical Turn On Delay Time | 15 ns | 25 ns |
| Part # Aliases | RCD100N19 | RCD100N20 |
| Unit Weight | 0.011993 oz | 0.011993 oz |