 |  |  | |
| PartNumber | PTFA192001F V4 R250 | PTFA192001EV4XWSA1 | PTFA192001FV4FWSA1 |
| Description | RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 1930-1990 MHz | FET RF 65V 1.99GHZ H-36260-2 | IC FET RF LDMOS 200W H-37260-2 |
| Manufacturer | Infineon | - | - |
| Product Category | RF MOSFET Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Polarity | N-Channel | - | - |
| Technology | Si | - | - |
| Id Continuous Drain Current | 900 mA | - | - |
| Vds Drain Source Breakdown Voltage | 65 V | - | - |
| Rds On Drain Source Resistance | 50 mOhms | - | - |
| Gain | 17 dB | - | - |
| Output Power | 100 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | H-37248-2 | - | - |
| Packaging | Reel | - | - |
| Configuration | Single | - | - |
| Height | 4.11 mm | - | - |
| Length | 22.35 mm | - | - |
| Operating Frequency | 1.93 GHz to 1.99 GHz | - | - |
| Type | RF Power MOSFET | - | - |
| Width | 13.72 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Channel Mode | Enhancement | - | - |
| Pd Power Dissipation | 417 W | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 250 | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Part # Aliases | FA192001FV4R25XT SP000393369 | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
PTFA192001F V4 R250 | RF MOSFET Transistors Hi Pwr RF LDMOS FET 200 W 1930-1990 MHz | |
Infineon Technologies |
PTFA192001EV4XWSA1 | FET RF 65V 1.99GHZ H-36260-2 | |
| PTFA192001F V4 R250 | IC FET RF LDMOS 200W H-37260-2 | ||
| PTFA192001FV4FWSA1 | IC FET RF LDMOS 200W H-37260-2 | ||
| PTFA192401EV4R250FTMA1 | FET RF 65V 1.96GHZ H-36260-2 | ||
| PTFA192401EV4XWSA1 | FET RF 65V 1.96GHZ H-36260-2 | ||
| PTFA192401FV4R250XTMA1 | IC FET RF LDMOS 240W H-37260-2 | ||
| PTFA192401FV4XWSA1 | IC FET RF LDMOS 240W H-37260-2 |