PMDPB70XPE

PMDPB70XPE,115 vs PMDPB70XPE vs PMDPB70XPE115

 
PartNumberPMDPB70XPE,115PMDPB70XPEPMDPB70XPE115
DescriptionMOSFET PMDPB70XPE/HUSON6/REEL 7" Q1/TNow Nexperia PMDPB70XPE - Small Signal Field-Effect TransistoNow Nexperia PMDPB70XPE - Small Signal Field-Effect Transistor, HUSON6
ManufacturerNexperiaNXP Semiconductors-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDFN-2020-6--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4.2 A--
Rds On Drain Source Resistance66 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Qg Gate Charge5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation8.33 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelDigi-ReelR Alternate Packaging-
Transistor Type2 P-Channel--
BrandNexperia--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time16 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time33 ns--
Typical Turn On Delay Time7 ns--
Unit Weight0.000254 oz--
Series---
Package Case-6-UDFN Exposed Pad-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-6-DFN2020 (2x2)-
FET Type-2 P-Channel (Dual)-
Power Max-515mW-
Drain to Source Voltage Vdss-20V-
Input Capacitance Ciss Vds-600pF @ 10V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-3A-
Rds On Max Id Vgs-79 mOhm @ 2A, 4.5V-
Vgs th Max Id-1.25V @ 250μA-
Gate Charge Qg Vgs-7.5nC @ 4.5V-
Produttore Parte # Descrizione RFQ
Nexperia
Nexperia
PMDPB70XPE,115 MOSFET PMDPB70XPE/HUSON6/REEL 7" Q1/T
PMDPB70XPE,115 MOSFET 2P-CH 20V 3A 6HUSON
PMDPB70XPE Now Nexperia PMDPB70XPE - Small Signal Field-Effect Transisto
PMDPB70XPE115 Now Nexperia PMDPB70XPE - Small Signal Field-Effect Transistor, HUSON6
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