 | |  | |
| PartNumber | PMDPB70XP,115 | PMDPB70XPE,115 | PMDPB70EN,115 |
| Description | MOSFET P-Chan -30V -3.8A | MOSFET PMDPB70XPE/HUSON6/REEL 7" Q1/T | IGBT Transistors MOSFET N-Chan 30V 4.5A |
| Manufacturer | Nexperia | Nexperia | NXP Semiconductors |
| Product Category | MOSFET | MOSFET | FETs - Arrays |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | DFN-2020-6 | DFN-2020-6 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 20 V | - |
| Id Continuous Drain Current | 3.8 A | 4.2 A | - |
| Rds On Drain Source Resistance | 87 mOhms | 66 mOhms | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Pd Power Dissipation | 1.17 W | 8.33 W | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | Digi-ReelR |
| Transistor Type | 2 P-Channel | 2 P-Channel | - |
| Brand | Nexperia | Nexperia | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.000254 oz | 0.000254 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 1 V | - |
| Qg Gate Charge | - | 5 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Fall Time | - | 15 ns | - |
| Rise Time | - | 16 ns | - |
| Typical Turn Off Delay Time | - | 33 ns | - |
| Typical Turn On Delay Time | - | 7 ns | - |
| Series | - | - | - |
| Package Case | - | - | 6-UDFN Exposed Pad |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 6-DFN2020 (2x2) |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 510mW |
| Drain to Source Voltage Vdss | - | - | 30V |
| Input Capacitance Ciss Vds | - | - | 130pF @ 15V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 3.5A |
| Rds On Max Id Vgs | - | - | 57 mOhm @ 3.5A, 10V |
| Vgs th Max Id | - | - | 2.5V @ 250μA |
| Gate Charge Qg Vgs | - | - | 4.5nC @ 10V |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Nexperia |
PMDPB70XP,115 | MOSFET P-Chan -30V -3.8A | |
| PMDPB70XPE,115 | MOSFET PMDPB70XPE/HUSON6/REEL 7" Q1/T | ||
| PMDPB70XP,115 | MOSFET 2P-CH 30V 2.9A 6DFN | ||
| PMDPB70XPE,115 | MOSFET 2P-CH 20V 3A 6HUSON | ||
| PMDPB70EN,115 | IGBT Transistors MOSFET N-Chan 30V 4.5A | ||
| PMDPB70EN | Nuovo e originale | ||
| PMDPB70EN115 | Now Nexperia PMDPB70EN - Small Signal Field-Effect Transistor, HUSON6 | ||
| PMDPB70XP+115 | Now Nexperia PMDPB70XP - Small Signal Field-Effect Transistor, HUSON6 | ||
| PMDPB70XP115 | Now Nexperia PMDPB70XP - Small Signal Field-Effect Transistor, HUSON6 | ||
| PMDPB70XPE | Now Nexperia PMDPB70XPE - Small Signal Field-Effect Transisto | ||
| PMDPB70XPE115 | Now Nexperia PMDPB70XPE - Small Signal Field-Effect Transistor, HUSON6 | ||
| PMDPB760EN | Nuovo e originale | ||
| PMDPB70XP | Nuovo e originale |