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| PartNumber | PMD12K100 | PMD12K40 | PMD12K60 |
| Description | Bipolar Transistors - BJT NPN 8.0A 100Vcev 100Vceo 2.0V 100W | ||
| Manufacturer | Central Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-3-2 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 100 V | - | - |
| Collector Base Voltage VCBO | 100 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 2 V | - | - |
| Maximum DC Collector Current | 8 A | - | - |
| Gain Bandwidth Product fT | 4 MHz | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 20000 | - | - |
| Packaging | Tray | - | - |
| Brand | Central Semiconductor | - | - |
| Continuous Collector Current | 8 A | - | - |
| DC Collector/Base Gain hfe Min | 1000 | - | - |
| Pd Power Dissipation | 100 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 20 | - | - |
| Subcategory | Transistors | - | - |
