NTMS480

NTMS4801NR2G vs NTMS4800N vs NTMS4807N

 
PartNumberNTMS4801NR2GNTMS4800NNTMS4807N
DescriptionMOSFET NFET SO8 30V 9.9A 12.5mOhm
ManufacturerON SemiconductorONON
Product CategoryMOSFETIC ChipsFETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOIC-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current12 A--
Rds On Drain Source Resistance9 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.1 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.5 mm--
Length5 mm--
SeriesNTMS4801N--
Transistor Type1 N-Channel--
Width4 mm--
BrandON Semiconductor--
Fall Time9.8 ns--
Product TypeMOSFET--
Rise Time3.7 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time29 ns--
Typical Turn On Delay Time10.5 ns--
Unit Weight0.006596 oz--
Produttore Parte # Descrizione RFQ
NTMS4807NR2G MOSFET NFET SO8 30V 14.8A 0.061R
NTMS4801NR2G MOSFET NFET SO8 30V 9.9A 12.5mOhm
NTMS4800N Nuovo e originale
NTMS4807N Nuovo e originale
NTMS4807NR2G 4807N Nuovo e originale
ON Semiconductor
ON Semiconductor
NTMS4800NR2G MOSFET 30V 8A 0.020OHM N-CH
NTMS4800NR2G MOSFET N-CH 30V 4.9A 8-SOIC
NTMS4801NR2G MOSFET N-CH 30V 7.5A 8-SOIC
NTMS4807NR2G MOSFET N-CH 30V 9.1A 8-SOIC
NTMS4802NR2G IGBT Transistors MOSFET 30V 13.6A N-CH 0.009OHM
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