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NTMS4800NR2G

NTMS4800NR2G
Mfr. #:
NTMS4800NR2G
Produttore:
ON Semiconductor
Descrizione:
MOSFET 30V 8A 0.020OHM N-CH
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NTMS4800NR2G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NTMS4800NR2G DatasheetNTMS4800NR2G Datasheet (P4-P5)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOIC-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
8 A
Rds On - Resistenza Drain-Source:
20 mOhms
Vgs - Tensione Gate-Source:
20 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
2 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Bobina
Altezza:
1.5 mm
Lunghezza:
5 mm
Tipo di transistor:
1 N-Channel
Larghezza:
4 mm
Marca:
ON Semiconductor
Tempo di caduta:
6.5 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
4 ns
Quantità confezione di fabbrica:
2500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
21 ns
Tempo di ritardo di accensione tipico:
9.4 ns
Unità di peso:
0.006596 oz
Tags
NTMS480, NTMS48, NTMS4, NTMS, NTM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
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Power MOSFET, 30 V, 8.0 A, N-Channel
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Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9.7A; On Resistance Rds(On):0.0125Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V Rohs Compliant: Yes
***nell
MOSFET,DUAL N-CH 30V 9.7A SO8; Transistor Type:Power MOSFET; Transistor Polarity:N ; Voltage, Vds Typ:30V; Current, Id Cont:9.7A; On State Resistance:15.5mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-55°C to +175°C; No. of Pins:8; Power Dissipation Pd:2W; Voltage, Vgs th Max:2.35V; Transistor Case Style:SOIC
***ure Electronics
N-Channel 30 V 14 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
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N-Channel PowerTrench® MOSFET 30V, 10.2A, 14mΩ
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ineon
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
*** Stop Electro
Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***et Europe
Trans MOSFET N/P-CH 30V 8.5A/7A 8-Pin SOIC T/R
***ure Electronics
DMC3021LSD Series 30 V 21 mOhm Complementary Pair Enhancement Mode Mosfet
***ark
DUAL MOSFET, COMPLEMENT, 30V, 8.5A, SOIC ROHS COMPLIANT: YES
*** Stop Electro
Power Field-Effect Transistor, 8.5A I(D), 30V, 0.021ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 30V 10A Automotive 8-Pin SOP T/R
***ark
Mosfet, N-Ch, 30V, 10A, Soic Rohs Compliant: Yes
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
Parte # Mfg. Descrizione Azione Prezzo
NTMS4800NR2G
DISTI # NTMS4800NR2G-ND		ON SemiconductorMOSFET N-CH 30V 4.9A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    NTMS4800NR2GON Semiconductor 
    RoHS: Not Compliant    		71716
    • 1000:$0.1800
    • 100:$0.1900
    • 500:$0.1900
    • 25:$0.2000
    • 1:$0.2200
    NTMS4800NR2G
    DISTI # 863-NTMS4800NR2G    		ON SemiconductorMOSFET 30V 8A 0.020OHM N-CH
    RoHS: Compliant    		0
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      Disponibilità
      Azione:
      Available
      Su ordine:
      4500
      Inserisci la quantità:
      Il prezzo attuale di NTMS4800NR2G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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